loadpatents
name:-0.0034279823303223
name:-0.013396024703979
name:-0.0010859966278076
Burnham; Shawn D. Patent Filings

Burnham; Shawn D.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Burnham; Shawn D..The latest application filed is for "normally-off gallium nitride transistor with insulating gate and method of making the same".

Company Profile
0.16.3
  • Burnham; Shawn D. - Oxnard CA
  • Burnham; Shawn D - Oxnard CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Stepped field plate wide bandgap field-effect transistor and method
Grant 9,929,243 - Corrion , et al. March 27, 2
2018-03-27
Apparatus and method for reducing the interface resistance in GaN Heterojunction FETs
Grant 9,252,247 - Micovic , et al. February 2, 2
2016-02-02
Enhancement mode normally-off gallium nitride heterostructure field effect transistor
Grant 9,190,534 - Hussain , et al. November 17, 2
2015-11-17
Stepped field plate wide bandgap field-effect transistor and method
Grant 9,142,626 - Corrion , et al. September 22, 2
2015-09-22
Self-aligned sidewall gate GaN HEMT
Grant 8,766,321 - Shinohara , et al. July 1, 2
2014-07-01
Enhancement and depletion mode GaN HMETs on the same substrate
Grant 8,748,244 - Corrion , et al. June 10, 2
2014-06-10
Enhancement mode normally-off gallium nitride heterostructure field effect transistor
Grant 8,728,884 - Hussain , et al. May 20, 2
2014-05-20
Apparatus and method for reducing the interface resistance in GaN heterojunction FETs
Grant 8,686,473 - Micovic , et al. April 1, 2
2014-04-01
AlGaN/GaN hybrid MOS-HFET
Grant 8,653,559 - Corrion , et al. February 18, 2
2014-02-18
Normally-off Gallium Nitride Transistor With Insulating Gate And Method Of Making The Same
App 20130328061 - Chu; Rongming ;   et al.
2013-12-12
Self aligned sidewall gate GaN HEMT
Grant 8,383,471 - Shinihara , et al. February 26, 2
2013-02-26
ALGaN/GaN HYBRID MOS-HFET
App 20130001646 - Corrion; Andrea ;   et al.
2013-01-03
Two stage plasma etching method for enhancement mode GaN HFET
Grant 8,124,505 - Burnham , et al. February 28, 2
2012-02-28

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