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Patent applications and USPTO patent grants for Burki; Ibrahim K..The latest application filed is for "active region implant methodology using indium to enhance short channel performance of a surface channel pmos device".
Patent | Date |
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Active region implant methodology using indium to enhance short channel performance of a surface channel PMOS device Grant 6,331,458 - Anjum , et al. December 18, 2 | 2001-12-18 |
Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer Grant 5,550,084 - Anjum , et al. August 27, 1 | 1996-08-27 |
Method for forming a silicide using ion beam mixing Grant 5,470,794 - Anjum , et al. November 28, 1 | 1995-11-28 |
Method for low energy implantation of argon to control titanium silicide formation Grant 5,444,024 - Anjum , et al. August 22, 1 | 1995-08-22 |
Method of fabricating semiconductor gate electrode with fluorine migration barrier Grant 5,393,676 - Anjum , et al. February 28, 1 | 1995-02-28 |
Method of making a semiconductor having selectively enhanced field oxide areas Grant 5,372,951 - Anjum , et al. December 13, 1 | 1994-12-13 |
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