Burk, Jr.; Albert Augustus

Patent Applications and Registrations

Patent applications and USPTO patent grants for Burk, Jr.; Albert Augustus.The latest application filed is for "using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device".

Company Profile

4.12.6

Burk, Jr.; Albert Augustus - Chapel Hill NC US
- Chapel Hill NC US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device Grant 10,541,306 - O'Loughlin , et al. Ja	2020-01-21
Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device Grant 10403722 -	2019-09-03
SiC devices with high blocking voltage terminated by a negative bevel Grant 9,349,797 - Cheng , et al. May 24, 2	2016-05-24
Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures Grant 9,054,017 - Saxler , et al. June 9, 2	2015-06-09
Using A Carbon Vacancy Reduction Material To Increase Average Carrier Lifetime In A Silicon Carbide Semiconductor Device App 20140070230 - O'Loughlin; Michael John ; et al.	2014-03-13
Thick Nitride Semiconductor Structures With Interlayer Structures And Methods Of Fabricating Thick Nitride Semiconductor Structures App 20130221327 - Saxler; Adam William ; et al.	2013-08-29
Sic Devices With High Blocking Voltage Terminated By A Negative Bevel App 20130026493 - Cheng; Lin ; et al.	2013-01-31
Thick nitride semiconductor structures with interlayer structures Grant 8,362,503 - Saxler , et al. January 29, 2	2013-01-29
Methods of fabricating nitride semiconductor structures with interlayer structures Grant 8,324,005 - Saxler , et al. December 4, 2	2012-12-04
Methods of Fabricating Nitride Semiconductor Structures with Interlayer Structures App 20110312159 - Saxler; Adam William ; et al.	2011-12-22
Minimizing degradation of SiC bipolar semiconductor devices Grant 7,880,171 - Sumakeris , et al. February 1, 2	2011-02-01
Nitride semiconductor structures with interlayer structures Grant 7,825,432 - Saxler , et al. November 2, 2	2010-11-02
Minimizing degradation of SiC bipolar semiconductor devices Grant 7,427,326 - Sumakeris , et al. September 23, 2	2008-09-23
Minimizing degradation of SiC bipolar semiconductor devices Grant 6,849,874 - Sumakeris , et al. February 1, 2	2005-02-01

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