Burghartz; Joachim N.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Burghartz; Joachim N..The latest application filed is for "semiconductor element having an enhancement-type transistor structure".

Company Profile

1.9.5

Burghartz; Joachim N. - Leinfelden-Echterdingen DE
Burghartz; Joachim N. - Shrub Oak NY
Burghartz; Joachim N. - Croton-on-Hudson NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor element having an enhancement-type transistor structure Grant 11,257,915 - Burghartz , et al. February 22, 2	2022-02-22
Semiconductor Element having an Enhancement-Type Transistor Structure App 20200373399 - BURGHARTZ; Joachim N. ; et al.	2020-11-26
Method for producing an integrated circuit and resulting film chip Grant 8,508,038 - Burghartz , et al. August 13, 2	2013-08-13
Method for producing a thin chip comprising an integrated circuit Grant 8,466,037 - Burghartz , et al. June 18, 2	2013-06-18
Circuit arrangement and imaging pyrometer for generating light- and temperature-dependent signals Grant 8,309,924 - Burghartz , et al. November 13, 2	2012-11-13
Method For Producing An Integrated Circuit And Resulting Film Chip App 20120161293 - Burghartz; Joachim N. ; et al.	2012-06-28
Method for producing a thin semiconductor chip comprising an integrated circuit Grant 7,951,691 - Burghartz , et al. May 31, 2	2011-05-31
Circuit Arrangement And Imaging Pyrometer For Generating Light- And Temperature-dependent Signals App 20100278212 - BURGHARTZ; Joachim N. ; et al.	2010-11-04
Method For Producing A Thin Semiconductor Chip Comprising An Integrated Circuit App 20090096089 - BURGHARTZ; Joachim N. ; et al.	2009-04-16
Method For Producing A Thin Chip Comprising An Integrated Circuit App 20090098708 - BURGHARTZ; Joachim N. ; et al.	2009-04-16
SiGe thin film or SOI MOSFET and method for making the same Grant 5,461,250 - Burghartz , et al. October 24, 1	1995-10-24
Method of forming bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy Grant 5,059,544 - Burghartz , et al. October 22, 1	1991-10-22

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