Budri; Thanas

Patent Applications and Registrations

Patent applications and USPTO patent grants for Budri; Thanas.The latest application filed is for "high performance sige:c hbt with phosphorous atomic layer doping".

Company Profile

0.11.2

Budri; Thanas - Portland ME US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Manufacturing resistors with tightened resistivity distribution in semiconductor integrated circuits Grant 8,679,936 - Budri , et al. March 25, 2	2014-03-25
System and method for monitoring chloride content and concentration induced by a metal etch process Grant 8,481,142 - Budri , et al. July 9, 2	2013-07-09
High performance SiGe:C HBT with phosphorous atomic layer doping Grant 8,115,196 - Ramdani , et al. February 14, 2	2012-02-14
Method for fabricating higher quality thicker gate oxide in a non-volatile memory cell and associated circuits Grant 8,097,923 - Budri , et al. January 17, 2	2012-01-17
HIGH PERFORMANCE SiGe:C HBT WITH PHOSPHOROUS ATOMIC LAYER DOPING App 20110180848 - Ramdani; Jamal ; et al.	2011-07-28
High performance SiGe:C HBT with phosphorous atomic layer doping Grant 7,892,915 - Ramdani , et al. February 22, 2	2011-02-22
Method for fabricating higher quality thicker gate oxide in a non-volatile memory cell and associated circuits App 20100276740 - Budri; Thanas ; et al.	2010-11-04
Method for fabricating higher quality thicker gate oxide in a non-volatile memory cell and associated circuits Grant 7,781,289 - Budri , et al. August 24, 2	2010-08-24
System and method for measuring germanium concentration for manufacturing control of BiCMOS films Grant 7,508,531 - Printy , et al. March 24, 2	2009-03-24
System and method for measuring germanium concentration for manufacturing control of BiCMOS films Grant 7,319,530 - Printy , et al. January 15, 2	2008-01-15
System and method for using areas near photo global alignment marks or unpatterned areas of a semiconductor wafer to create structures for SIMS or E-Beam or XRD testing Grant 7,038,222 - Budri , et al. May 2, 2	2006-05-02

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