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Patent applications and USPTO patent grants for Bu; Jianhui.The latest application filed is for "sti stress effect modeling method and device of an mos device".
Patent | Date |
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STI stress effect modeling method and device of an MOS device Grant 10,176,287 - Bu , et al. J | 2019-01-08 |
SOI MOS device modeling method Grant 9,626,467 - Bu , et al. April 18, 2 | 2017-04-18 |
Sti Stress Effect Modeling Method And Device Of An Mos Device App 20160259876 - Bu; Jianhui ;   et al. | 2016-09-08 |
Method For Determining Pn Junction Depth App 20150177312 - Bu; Jianhui ;   et al. | 2015-06-25 |
Soi Mos Device Modeling Method App 20150178429 - Bu; Jianhui ;   et al. | 2015-06-25 |
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