Brown Richard J
USPTO Trademark & Patent Filings
Trademark applications and grants for Brown Richard J. Brown Richard J has 1 trademark applications. The latest application filed is for "INFINIPIXELS"
- Company Aliases
- Brown, Richard J.
- j richard brown
- BROWN; Richard J. - Ithaca NY
- Brown; Richard J. - Scottsdale AZ
- Brown; Richard J. - Los Gatos CA
- Brown; Richard J. - Ithaca NY
Trademarks Patents
| Patent Application | Date |
|---|---|
| VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION 20220140130 - 17/576355 SHEALY; James R. ; et al. | 2022-05-05 |
| STREAMLINED GaN-BASED FABRICATION OF LIGHT EMITTING DIODE STRUCTURES 20210367107 - 17/393852 BROWN; Richard J. ; et al. | 2021-11-25 |
| LOW FITTING HAIRLINE CAP 20210227914 - 16/750660 Brown; Richard J. | 2021-07-29 |
| METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE 20160190351 - 14/886666 Kizilyalli; Isik C. ; et al. | 2016-06-30 |
| GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING AN ALUMINUM GALLIUM NITRIDE BARRIER LAYER 20160190296 - 14/852924 Romano; Linda ; et al. | 2016-06-30 |
| Vertical field effect transistor device and method of fabrication 11,251,295 - 16/814,886 Shealy , et al. February 15, 2 | 2022-02-15 |
| Streamlined GaN-based fabrication of light emitting diode structures 11,114,587 - 16/813,362 Brown , et al. September 7, 2 | 2021-09-07 |
| Method of fabricating a GaN P-i-N diode using implantation 9,484,470 - 14/834,306 Kizilyalli , et al. November 1, 2 | 2016-11-01 |
| GaN-based Schottky barrier diode with algan surface layer 9,450,112 - 14/479,634 Brown , et al. September 20, 2 | 2016-09-20 |
| Edge termination by ion implantation in gallium nitride 9,330,918 - 14/558,393 Kizilyalli , et al. May 3, 2 | 2016-05-03 |
Mark Image Registration | Serial | Trademark Application Date |
|---|---|
"INFINIPIXELS" 90432235 |
INFINIPIXELS 2020-12-30 |
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