Brigham; Lawrence N.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Brigham; Lawrence N..The latest application filed is for "transistor having a deposited dual-layer spacer structure".

Company Profile

0.9.2

Brigham; Lawrence N. - Beaverton OR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Transistor having a deposited dual-layer spacer structure Grant 6,720,631 - Brigham , et al. April 13, 2	2004-04-13
Polysilicon/amorphous silicon composite gate electrode Grant 6,703,672 - Brigham , et al. March 9, 2	2004-03-09
Shielded channel transistor structure with embedded source/drain junctions Grant 6,380,010 - Brigham , et al. April 30, 2	2002-04-30
Transistor Having A Deposited Dual-layer Spacer Structure App 20010042894 - BRIGHAM, LAWRENCE N. ; et al.	2001-11-22
Shielded channel transistor structure with embedded source/drain junctions App 20010036693 - Brigham, Lawrence N. ; et al.	2001-11-01
Shielded channel transistor structure with embedded source/drain junctions Grant 6,274,913 - Brigham , et al. August 14, 2	2001-08-14
High tensile nitride layer Grant 6,046,494 - Brigham , et al. April 4, 2	2000-04-04
Polysilicon polish for patterning improvement Grant 5,911,111 - Bohr , et al. June 8, 1	1999-06-08
Manufacturable dielectric formed using multiple oxidation and anneal steps Grant 5,891,809 - Chau , et al. April 6, 1	1999-04-06
Method of making a transistor having a deposited dual-layer spacer structure Grant 5,714,413 - Brigham , et al. February 3, 1	1998-02-03
High tensile nitride layer Grant 5,633,202 - Brigham , et al. May 27, 1	1997-05-27

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