Breitwisch; Matthew J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Breitwisch; Matthew J..The latest application filed is for "self aligned fin-type programmable memory cell".

Company Profile

3.118.101

Breitwisch; Matthew J. - Yorktown Heights NY
Breitwisch; Matthew J. - Pound Ridge NY US
Breitwisch; Matthew J. - Essex Junction VT
Breitwisch; Matthew J. - Armonk NY
Breitwisch; Matthew J - Yorktown Heights NY
Breitwisch; Matthew J. - Westchester County NY
Breitwisch; Matthew J. - Westchester NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Uniform critical dimension size pore for PCRAM application Grant 9,166,165 - Breitwisch , et al. October 20, 2	2015-10-20
Self-aligned lower bottom electrode Grant 9,059,394 - Breitwisch June 16, 2	2015-06-16
Thermally confined electrode for programmable resistance memory Grant 8,987,700 - Lai , et al. March 24, 2	2015-03-24
Ge-Rich GST-212 phase change memory materials Grant 8,946,666 - Cheng , et al. February 3, 2	2015-02-03
Memory programming for a phase change memory cell Grant 8,897,062 - Breitwisch , et al. November 25, 2	2014-11-25
Phase change memory cell array with self-converged bottom electrode and method for manufacturing Grant 8,860,111 - Lung , et al. October 14, 2	2014-10-14
Self aligned fin-type programmable memory cell Grant 8,853,047 - Lung , et al. October 7, 2	2014-10-07
Self Aligned Fin-type Programmable Memory Cell App 20140256110 - LUNG; HSIANG-LAN ; et al.	2014-09-11
Small footprint phase change memory cell Grant 8,809,828 - Breitwisch , et al. August 19, 2	2014-08-19
Composite target sputtering for forming doped phase change materials Grant 8,772,747 - Cheng , et al. July 8, 2	2014-07-08
Small Footprint Phase Change Memory Cell App 20140166967 - Breitwisch; Matthew J. ; et al.	2014-06-19
Uniform Critical Dimension Size Pore For Pcram Application App 20140154862 - Breitwisch; Matthew J. ; et al.	2014-06-05
Small footprint phase change memory cell Grant 8,728,859 - Breitwisch , et al. May 20, 2	2014-05-20
Self aligned fin-type programmable memory cell Grant 8,729,521 - Lung , et al. May 20, 2	2014-05-20
Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device Grant 8,716,759 - Breitwisch , et al. May 6, 2	2014-05-06
Pore phase change material cell fabricated from recessed pillar Grant 8,686,391 - Schrott , et al. April 1, 2	2014-04-01
Phase change memory electrode with sheath for reduced programming current Grant 8,648,326 - Breitwisch , et al. February 11, 2	2014-02-11
In via formed phase change memory cell with recessed pillar heater Grant 8,633,464 - Breitwisch , et al. January 21, 2	2014-01-21
Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocks Grant 8,589,320 - Breitwisch , et al. November 19, 2	2013-11-19
Method To Tailor Location Of Peak Electric Field Directly Underneath An Extension Spacer For Enhanced Programmability Of A Prompt-shift Device App 20130295742 - Breitwisch; Matthew J. ; et al.	2013-11-07
Thermally insulated phase change material memory cells Grant 8,536,675 - Breitwisch , et al. September 17, 2	2013-09-17
Composite Target Sputtering For Forming Doped Phase Change Materials App 20130234093 - CHENG; HUAI-YU ; et al.	2013-09-12
Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell Grant 8,492,194 - Breitwisch , et al. July 23, 2	2013-07-23
Flat lower bottom electrode for phase change memory cell Grant 8,471,236 - Breitwisch , et al. June 25, 2	2013-06-25
Thermally insulated phase material cells Grant 8,466,006 - Breitwisch , et al. June 18, 2	2013-06-18
Thermally Confined Electrode For Programmable Resistance Memory App 20130140513 - Lai; Sheng-Chih ; et al.	2013-06-06
Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process Grant 8,445,313 - Breitwisch , et al. May 21, 2	2013-05-21
Composite target sputtering for forming doped phase change materials Grant 8,426,242 - Cheng , et al. April 23, 2	2013-04-23
Single mask adder phase change memory element Grant 8,415,653 - Breitwisch , et al. April 9, 2	2013-04-09
Single mask adder phase change memory element Grant 8,395,192 - Breitwisch , et al. March 12, 2	2013-03-12
Vertical field effect transistor arrays and methods for fabrication thereof Grant 8,383,501 - Breitwisch , et al. February 26, 2	2013-02-26
Phase change memory random access device using single-element phase change material Grant 8,378,328 - Breitwisch , et al. February 19, 2	2013-02-19
Phase Change Memory Electrode With Sheath For Reduced Programming Current App 20130026436 - Breitwisch; Matthew J. ; et al.	2013-01-31
Phase change memory having one or more non-constant doping profiles Grant 8,363,463 - Shih , et al. January 29, 2	2013-01-29
Pore Phase Change Material Cell Fabricated From Recessed Pillar App 20130001500 - Schrott; Alejandro G. ; et al.	2013-01-03
Compressive Structure for Enhancing Contact of Phase Change Material Memory Cells App 20130001499 - Breitwisch; Matthew J. ; et al.	2013-01-03
Phase change memory device with plated phase change material Grant 8,344,351 - Breitwisch , et al. January 1, 2	2013-01-01
Method to reduce a via area in a phase change memory cell Grant 8,338,225 - Breitwisch , et al. December 25, 2	2012-12-25
Pore phase change material cell fabricated from recessed pillar Grant 8,330,137 - Schrott , et al. December 11, 2	2012-12-11
Dielectric mesh isolated phase change structure for phase change memory Grant 8,324,605 - Lung , et al. December 4, 2	2012-12-04
Self-aligned bit line under word line memory array Grant 8,310,864 - Lung , et al. November 13, 2	2012-11-13
Area efficient neuromorphic circuits using field effect transistors (FET) and variable resistance material Grant 8,311,965 - Breitwisch , et al. November 13, 2	2012-11-13
Flat Lower Bottom Electrode For Phase Change Memory Cell App 20120280197 - Breitwisch; Matthew J. ; et al.	2012-11-08
Area Efficient Neuromorphic System App 20120284217 - Breitwisch; Matthew J. ; et al.	2012-11-08
Method For Forming A Self-aligned Bit Line For Pcram And Self-aligned Etch Back Process App 20120276688 - Breitwisch; Matthew J. ; et al.	2012-11-01
Single mask adder phase change memory element Grant 8,283,202 - Breitwisch , et al. October 9, 2	2012-10-09
Flat lower bottom electrode for phase change memory cell Grant 8,283,650 - Breitwisch , et al. October 9, 2	2012-10-09
Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device Grant 8,278,197 - Breitwisch , et al. October 2, 2	2012-10-02
Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process Grant 8,273,598 - Breitwisch , et al. September 25, 2	2012-09-25
Method For Forming A Self-aligned Bit Line For Pcram And Self-aligned Etch Back Process App 20120202333 - Breitwisch; Matthew J. ; et al.	2012-08-09
Methods and apparatus for reducing defect bits in phase change memory Grant 8,238,149 - Shih , et al. August 7, 2	2012-08-07
Phase Change Memory Cell Array With Self-converged Bottom Electrode And Method For Manufacturing App 20120193599 - Lung; Hsiang-Lan ; et al.	2012-08-02
Composite Target Sputtering For Forming Doped Phase Change Materials App 20120193595 - Cheng; Huai-Yu ; et al.	2012-08-02
Phase change memory device suitable for high temperature operation Grant 8,233,317 - Breitwisch , et al. July 31, 2	2012-07-31
Method To Tailor Location Of Peak Electric Field Directly Underneath An Extension Spacer For Enhanced Programmability Of A Prompt-shift Device App 20120181627 - Breitwisch; Matthew J. ; et al.	2012-07-19
Method To Tailor Location Of Peak Electric Field Directly Underneath An Extension Spacer For Enhanced Programmability Of A Prompt-shift Device App 20120181628 - Breitwisch; Matthew J. ; et al.	2012-07-19
Single Mask Adder Phase Change Memory Element App 20120168709 - Breitwisch; Matthew J. ; et al.	2012-07-05
Self-aligned Lower Bottom Electrode App 20120139119 - Breitwisch; Matthew J.	2012-06-07
Thermally Insulated Phase Material Cells App 20120129313 - Breitwisch; Matthew J. ; et al.	2012-05-24
Thermally Insulated Phase Change Material Memory Cells App 20120126194 - Breitwisch; Matthew J. ; et al.	2012-05-24
Phase change memory cell array with self-converged bottom electrode and method for manufacturing Grant 8,178,386 - Lung , et al. May 15, 2	2012-05-15
Method To Reduce A Via Area In A Phase Change Memory Cell App 20120115302 - Breitwisch; Matthew J. ; et al.	2012-05-10
In Via Formed Phase Change Memory Cell With Recessed Pillar Heater App 20120112154 - Breitwisch; Matthew J. ; et al.	2012-05-10
Thermally insulated phase change material memory cells with pillar structure Grant 8,138,056 - Breitwisch , et al. March 20, 2	2012-03-20
Method for manufacturing a phase change memory device with pillar bottom electrode Grant 8,138,028 - Lung , et al. March 20, 2	2012-03-20
Self-aligned lower bottom electrode Grant 8,129,268 - Breitwisch March 6, 2	2012-03-06
Nanoscale electrodes for phase change memory devices Grant 8,119,528 - Schrott , et al. February 21, 2	2012-02-21
One-mask Phase Change Memory Process Integration App 20120037877 - Breitwisch; Matthew J. ; et al.	2012-02-16
Phase change memory cell with reduced switchable volume Grant 8,115,186 - Breitwisch , et al. February 14, 2	2012-02-14
Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Grant 8,116,126 - Breitwisch , et al. February 14, 2	2012-02-14
Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillars Grant 8,110,901 - Breitwisch , et al. February 7, 2	2012-02-07
Resistive memory devices having a not-and (NAND) structure Grant 8,107,276 - Breitwisch , et al. January 31, 2	2012-01-31
In via formed phase change memory cell with recessed pillar heater Grant 8,105,859 - Breitwisch , et al. January 31, 2	2012-01-31
Method to reduce a via area in a phase change memory cell Grant 8,101,456 - Breitwisch , et al. January 24, 2	2012-01-24
Self-aligned Bit Line Under Word Line Memory Array App 20110305074 - Lung; Hsiang-Lan ; et al.	2011-12-15
Self Aligned Fin-type Programmable Memory Cell App 20110278528 - Lung; Hsiang-Lan ; et al.	2011-11-17
Vertical Field Effect Transistor Arrays And Methods For Fabrication Thereof App 20110275209 - Breitwisch; Matthew J. ; et al.	2011-11-10
Phase change memory program method without over-reset Grant 8,036,014 - Lee , et al. October 11, 2	2011-10-11
Phase Change Memory Device With Plated Phase Change Material App 20110240944 - Breitwisch; Matthew J. ; et al.	2011-10-06
Phase change memory device with plated phase change material Grant 8,030,130 - Breitwisch , et al. October 4, 2	2011-10-04
Memory Programming App 20110228600 - Breitwisch; Matthew J. ; et al.	2011-09-22
Iteratively writing contents to memory locations using a statistical model Grant 8,023,345 - Breitwisch , et al. September 20, 2	2011-09-20
Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell Grant 8,012,790 - Breitwisch , et al. September 6, 2	2011-09-06
Chemical Mechanical Polishing Stop Layer For Fully Amorphous Phase Change Memory Pore Cell App 20110210307 - Breitwisch; Matthew J. ; et al.	2011-09-01
Pore Phase Change Material Cell Fabricated From Recessed Pillar App 20110186800 - Schrott; Alejandro G. ; et al.	2011-08-04
Planarization stop layer in phase change memory integration Grant 7,985,654 - Breitwisch , et al. July 26, 2	2011-07-26
Method for fabricating a vertical field effect transistor array comprising a plurality of semiconductor pillars Grant 7,981,748 - Breitwisch , et al. July 19, 2	2011-07-19
Self aligned ring electrodes Grant 7,981,755 - Breitwisch , et al. July 19, 2	2011-07-19
Etching of tungsten selective to titanium nitride Grant 7,972,966 - Breitwisch , et al. July 5, 2	2011-07-05
Phase change memory with finite annular conductive path Grant 7,965,537 - Breitwisch , et al. June 21, 2	2011-06-21
Pore phase change material cell fabricated from recessed pillar Grant 7,960,203 - Schrott , et al. June 14, 2	2011-06-14
Resistive Memory Devices Having A Not-and (nand) Structure App 20110134676 - Breitwisch; Matthew J. ; et al.	2011-06-09
Single Mask Adder Phase Change Memory Element App 20110121252 - Breitwisch; Matthew J. ; et al.	2011-05-26
Single Mask Adder Phase Change Memory Element App 20110121251 - Breitwisch; Matthew J. ; et al.	2011-05-26
Self-aligned Lower Bottom Electrode App 20110115087 - Breitwisch; Matthew J.	2011-05-19
Phase Change Memory Device Suitable For High Temperature Operation App 20110116307 - Breitwisch; Matthew J. ; et al.	2011-05-19
Area Efficient Neuromorphic Circuits App 20110119214 - Breitwisch; Matthew J. ; et al.	2011-05-19
Single mask adder phase change memory element Grant 7,943,420 - Breitwisch , et al. May 17, 2	2011-05-17
Self-converging bottom electrode ring Grant 7,935,564 - Breitwisch , et al. May 3, 2	2011-05-03
Wafer bonded access device for multi-layer phase change memory using lock-and-key alignment Grant 7,927,911 - Breitwisch , et al. April 19, 2	2011-04-19
Planarization Stop Layer In Phase Change Memory Integration App 20110062559 - Breitwisch; Matthew J. ; et al.	2011-03-17
In Via Formed Phase Change Memory Cell With Recessed Pillar Heater App 20110057162 - Breitwisch; Matthew J. ; et al.	2011-03-10
Phase Change Structure With Composite Doping For Phase Change Memory App 20110049456 - LUNG; HSIANG-LAN ; et al.	2011-03-03
Flat Lower Bottom Electrode For Phase Change Memory Cell App 20110049462 - Breitwisch; Matthew J. ; et al.	2011-03-03
Chemical Mechanical Polishing Stop Layer For Fully Amorphous Phase Change Memory Pore Cell App 20110049461 - Breitwisch; Matthew J. ; et al.	2011-03-03
Single Mask Adder Phase Change Memory Element App 20110049460 - Breitwisch; Matthew J. ; et al.	2011-03-03
Wafer Bonded Access Device For Multi-layer Phase Change Memory Using Lock-and-key Alignment App 20110049455 - Breitwisch; Matthew J. ; et al.	2011-03-03
Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Grant 7,894,272 - Breitwisch , et al. February 22, 2	2011-02-22
Phase Change Memory Device With Plated Phase Change Material App 20110037042 - Breitwisch; Matthew J. ; et al.	2011-02-17
Measurement Method For Reading Multi-level Memory Cell Utilizing Measurement Time Delay As The Characteristic Parameter For Level Definition App 20110038199 - Breitwisch; Matthew J. ; et al.	2011-02-17
Substrate backgate for trigate FET Grant 7,888,743 - Anderson , et al. February 15, 2	2011-02-15
Fill-in etching free pore device Grant 7,879,645 - Lung , et al. February 1, 2	2011-02-01
Cross point switch using phase change material Grant 7,880,194 - Breitwisch , et al. February 1, 2	2011-02-01
Phase change memory device and method of manufacture Grant 7,868,313 - Breitwisch , et al. January 11, 2	2011-01-11
Thermally Insulated Phase Change Material Cells App 20110001111 - Breitwisch; Matthew J. ; et al.	2011-01-06
Phase change memory programming method without reset over-write Grant 7,864,566 - Breitwisch , et al. January 4, 2	2011-01-04
Phase Change Memory With Finite Annular Conductive Path App 20100328994 - Breitwisch; Matthew J. ; et al.	2010-12-30
Phase Change Memory Having One Or More Non-constant Doping Profiles App 20100328996 - SHIH; YEN-HAO ; et al.	2010-12-30
Methods And Apparatus For Reducing Defect Bits In Phase Change Memory App 20100328995 - SHIH; YEN-HAO ; et al.	2010-12-30
Phase change material with filament electrode Grant 7,851,323 - Breitwisch , et al. December 14, 2	2010-12-14
Vertical Field Effect Transistor Arrays And Methods For Fabrication Thereof App 20100301409 - Breitwisch; Matthew J. ; et al.	2010-12-02
Etching Of Tungsten Selective To Titanium Nitride App 20100297848 - Breitwisch; Matthew J. ; et al.	2010-11-25
Vertical field effect transistor arrays and methods for fabrication thereof Grant 7,825,460 - Breitwisch , et al. November 2, 2	2010-11-02
Memory Programming App 20100214829 - Breitwisch; Matthew J. ; et al.	2010-08-26
Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Grant 7,764,533 - Breitwisch , et al. July 27, 2	2010-07-27
Multi-level Memory Cell Utilizing Measurement Time Delay As The Characteristic Parameter For Level Definition App 20100135085 - Breitwisch; Matthew J. ; et al.	2010-06-03
Phase Change Memory Program Method Without Over-reset App 20100110778 - LEE; MING-HSIU ; et al.	2010-05-06
Virtual body-contacted trigate Grant 7,700,446 - Anderson , et al. April 20, 2	2010-04-20
Dielectric mesh isolated phase change structure for phase change memory App 20100084624 - Lung; Hsiang-Lan ; et al.	2010-04-08
Fin-type antifuse Grant 7,691,684 - Breitwisch , et al. April 6, 2	2010-04-06
Method To Reduce A Via Area In A Phase Change Memory Cell App 20100078617 - Breitwisch; Matthew J. ; et al.	2010-04-01
Phase change element extension embedded in an electrode Grant 7,682,945 - Lam , et al. March 23, 2	2010-03-23
Nanoscale Electrodes for Phase Change Memory Devices App 20100048020 - Schrott; Alejandro G. ; et al.	2010-02-25
Mushroom Type Memory Cell Having Self-aligned Bottom Electrode And Diode Access Device App 20100019215 - Lung; Hsiang-Lan ; et al.	2010-01-28
Phase Change Memory Programming Method Without Reset Over-write App 20100002499 - Breitwisch; Matthew J. ; et al.	2010-01-07
Vertical Field Effect Transistor Arrays And Methods For Fabrication Thereof App 20090305492 - Breitwisch; Matthew J. ; et al.	2009-12-10
Phase Change Memory Cell with Reduced Switchable Volume App 20090294748 - Breitwisch; Matthew J. ; et al.	2009-12-03
Method To Tailor Location Of Peak Electric Field Directly Underneath An Extension Spacer For Enhanced Programmability Of A Prompt-shift Device App 20090294850 - Breitwisch; Matthew J. ; et al.	2009-12-03
Phase Change Material With Filament Electrode App 20090275168 - Breitwisch; Matthew J. ; et al.	2009-11-05
Phase Change Memory Device And Method Of Manufacture App 20090268507 - Breitwisch; Matthew J. ; et al.	2009-10-29
Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Grant 7,602,632 - Breitwisch , et al. October 13, 2	2009-10-13
Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Grant 7,602,631 - Breitwisch , et al. October 13, 2	2009-10-13
Electrode Formed In Aperture Defined By A Copolymer Mask App 20090239334 - Breitwisch; Matthew J. ; et al.	2009-09-24
Phase Change Memory Random Access Device Using Single-element Phase Change Material App 20090212274 - Breitwisch; Matthew J. ; et al.	2009-08-27
Self-converging Bottom Electrode Ring App 20090212272 - Breitwisch; Matthew J. ; et al.	2009-08-27
Phase Change Element Extension Embedded In An Electrode App 20090194757 - Lam; Chung H. ; et al.	2009-08-06
Fill-in Etching Free Pore Device App 20090189138 - Lung; Hsiang-Lan ; et al.	2009-07-30
Pore Phase Change Material Cell Fabricated From Recessed Pillar App 20090189139 - Schrott; Alejandro G. ; et al.	2009-07-30
Cross Point Switch Using Phase Change Material App 20090189731 - Breitwisch; Matthew J. ; et al.	2009-07-30
Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Grant 7,567,473 - Breitwisch , et al. July 28, 2	2009-07-28
Phase change material with filament electrode Grant 7,560,721 - Breitwisch , et al. July 14, 2	2009-07-14
Programmable resistive memory with diode structure Grant 7,551,473 - Lung , et al. June 23, 2	2009-06-23
Self Aligned Ring Electrodes App 20090111228 - Breitwisch; Matthew J. ; et al.	2009-04-30
Phase change memory cell design with adjusted seam location Grant 7,525,176 - Breitwisch , et al. April 28, 2	2009-04-28
Programmable Resistive Memory with Diode Structure App 20090095948 - Lung; Hsiang-Lan ; et al.	2009-04-16
Phase change memory cell with limited switchable volume Grant 7,514,705 - Breitwisch , et al. April 7, 2	2009-04-07
Multi-level Memory Cell Utilizing Measurement Time Delay As The Characteristic Parameter For Level Definition App 20090073785 - Breitwisch; Matthew J. ; et al.	2009-03-19
Phase Change Memory Cell Array With Self-converged Bottom Electrode And Method For Manufacturing App 20090072216 - Lung; Hsiang Lan ; et al.	2009-03-19
Multi-level Memory Cell Utilizing Measurement Time Delay As The Characteristic Parameter For Level Definition App 20090073784 - Breitwisch; Matthew J. ; et al.	2009-03-19
Multi-level Memory Cell Utilizing Measurement Time Delay As The Characteristic Parameter For Level Definition App 20090073790 - Breitwisch; Matthew J. ; et al.	2009-03-19
Multi-level Memory Cell Utilizing Measurement Time Delay As The Characteristic Parameter For Level Definition App 20090073783 - Breitwisch; Matthew J. ; et al.	2009-03-19
Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Grant 7,505,334 - Breitwisch , et al. March 17, 2	2009-03-17
Phase change memory cell with electrode Grant 7,485,487 - Breitwisch , et al. February 3, 2	2009-02-03
Thin film phase change memory cell formed on silicon-on-insulator substrate Grant 7,479,671 - Breitwisch , et al. January 20, 2	2009-01-20
Fin-Type Antifuse App 20080286905 - Breitwisch; Matthew J. ; et al.	2008-11-20
Method of Forming Phase Change Memory Cell With Reduced Switchable Volume App 20080265234 - Breitwisch; Matthew J. ; et al.	2008-10-30
Sense circuit for resistive memory Grant 7,426,134 - Happ , et al. September 16, 2	2008-09-16
Method For Manufacturing A Phase Change Memory Device With Pillar Bottom Electrode App 20080191187 - LUNG; HSIANG LAN ; et al.	2008-08-14
Substrate backgate for trigate FET Grant 7,411,252 - Anderson , et al. August 12, 2	2008-08-12
Substrate backgate for trigate FET App 20080185649 - Anderson; Brent A. ; et al.	2008-08-07
Phase Change Memory Cell Design with Adjusted Seam Location App 20080179591 - Breitwisch; Matthew J. ; et al.	2008-07-31
Virtual Body-contacted Trigate App 20080176363 - Anderson; Brent A. ; et al.	2008-07-24
Uniform Critical Dimension Size Pore For Pcram Application App 20080164453 - Breitwisch; Matthew J. ; et al.	2008-07-10
Thin film phase change memory cell formed on silicon-on-insulator substrate App 20080054323 - Breitwisch; Matthew J. ; et al.	2008-03-06
Vertical field effect transistor arrays and methods for fabrication thereof App 20080054350 - Breitwisch; Matthew J. ; et al.	2008-03-06
Virtual body-contacted trigate Grant 7,288,802 - Anderson , et al. October 30, 2	2007-10-30
Phase change memory cell with limited switchable volume App 20070246748 - Breitwisch; Matthew J. ; et al.	2007-10-25
Sense circuit for resistive memory App 20070201267 - Happ; Thomas ; et al.	2007-08-30
Isolated Fully Depleted Silicon-on-insulator Regions By Selective Etch App 20070128776 - Breitwisch; Matthew J. ; et al.	2007-06-07
Isolated fully depleted silicon-on-insulator regions by selective etch Grant 7,190,007 - Breitwisch , et al. March 13, 2	2007-03-13
Virtual Body-contacted Trigate App 20070023756 - Anderson; Brent A. ; et al.	2007-02-01
Substrate Backgate For Trigate Fet App 20060286724 - Anderson; Brent A. ; et al.	2006-12-21
Isolated fully depleted silicon-on-insulator regions by selective etch App 20060027889 - Breitwisch; Matthew J. ; et al.	2006-02-09
CMOS device having retrograde n-well and p-well Grant 6,967,380 - Breitwisch , et al. November 22, 2	2005-11-22
Selective silicide blocking Grant 6,881,672 - Breitwisch , et al. April 19, 2	2005-04-19
Method and design for measuring SRAM array leakage macro (ALM) Grant 6,778,449 - Breitwisch , et al. August 17, 2	2004-08-17
CMOS device having retrograde n-well and p-well App 20040157418 - Breitwisch, Matthew J. ; et al.	2004-08-12
Selective silicide blocking App 20040110371 - Breitwisch, Matthew J. ; et al.	2004-06-10
Selective silicide blocking Grant 6,700,163 - Breitwisch , et al. March 2, 2	2004-03-02
Method and design for measuring SRAM array leakage macro (ALM) App 20040001376 - Breitwisch, Matthew J. ; et al.	2004-01-01
Method of forming retrograde n-well and p-well Grant 6,667,205 - Breitwisch , et al. December 23, 2	2003-12-23
Method of forming retrograde n-well and p-well App 20030197227 - Breitwisch, Matthew J. ; et al.	2003-10-23
Selective silicide blocking App 20030107091 - Breitwisch, Matthew J. ; et al.	2003-06-12
Embedded one-time programmable non-volatile memory using prompt shift device Grant 6,518,614 - Breitwisch , et al. February 11, 2	2003-02-11