Boutros; Karim S.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Boutros; Karim S..The latest application filed is for "hemt gan device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same".

Company Profile

2.31.22

Boutros; Karim S. - Moorpark CA
Boutros; Karim S - Moorpark CA US
Boutros; Karim S. - Malibu CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same Grant 10,700,201 - Khalil , et al.	2020-06-30
Dual gate III-switch for high voltage current relay Grant 10,447,261 - Hughes , et al. Oc	2019-10-15
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas Grant 10,325,997 - Khalil , et al.	2019-06-18
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same Grant 10,192,986 - Khalil , et al. Ja	2019-01-29
HEMT GaN DEVICE WITH A NON-UNIFORM LATERAL TWO DIMENSIONAL ELECTRON GAS PROFILE AND METHOD OF MANUFACTURING THE SAME App 20180374952 - Khalil; Sameh G. ; et al.	2018-12-27
Vertical Iii-nitride Semiconductor Device With A Vertically Formed Two Dimensional Electron Gas App 20170025518 - KHALIL; Sameh G. ; et al.	2017-01-26
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas Grant 9,490,357 - Khalil , et al. November 8, 2	2016-11-08
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same Grant 9,379,195 - Khalil , et al. June 28, 2	2016-06-28
Stitched gate GaN HEMTs Grant 9,368,622 - Boutros June 14, 2	2016-06-14
III-Nitride insulating-gate transistors with passivation Grant 9,337,332 - Chu , et al. May 10, 2	2016-05-10
Iii-nitride Insulating-gate Transistors With Passivation App 20150349117 - CHU; Rongming ; et al.	2015-12-03
Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops Grant 9,077,335 - Hughes , et al. July 7, 2	2015-07-07
III-Nitride metal-insulator-semiconductor field-effect transistor Grant 9,059,200 - Chu , et al. June 16, 2	2015-06-16
Reduction Of The Inductance Of Power Loop And Gate Loop In A Half-bridge Converter With Vertical Current Loops App 20150116022 - Hughes; Brian ; et al.	2015-04-30
Non-uniform two-dimensional electron gas profile in III-nitride HEMT devices Grant 8,999,780 - Khalil , et al. April 7, 2	2015-04-07
Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask Grant 9,000,484 - Khalil , et al. April 7, 2	2015-04-07
Vertical Iii-nitride Semiconductor Device With A Vertically Formed Two Dimensional Electron Gas App 20150014700 - Khalil; Sameh G. ; et al.	2015-01-15
Controlling lateral two-dimensional electron hole gas HEMT in type III nitride devices using ion implantation through gray scale mask Grant 8,933,487 - Khalil , et al. January 13, 2	2015-01-13
III-nitride metal insulator semiconductor field effect transistor Grant 8,853,709 - Chu , et al. October 7, 2	2014-10-07
GaN HEMTs with a back gate connected to the source Grant 8,772,832 - Boutros July 8, 2	2014-07-08
Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices Grant 8,680,536 - Khalil , et al. March 25, 2	2014-03-25
Controlling Lateral Two-dimensional Electron Hole Gas Hemt In Type Iii Nitride Devices Using Ion Implantation Through Gray Scale Mask App 20140051221 - Khalil; Sameh ; et al.	2014-02-20
AlGaN/GaN hybrid MOS-HFET Grant 8,653,559 - Corrion , et al. February 18, 2	2014-02-18
Normally-off Gallium Nitride Transistor With Insulating Gate And Method Of Making The Same App 20130328061 - Chu; Rongming ; et al.	2013-12-12
Non-uniform Two Dimensional Electron Gas Profile In Iii-nitride Hemt Devices App 20130313560 - Khalil; Sameh G. ; et al.	2013-11-28
A Non-uniform Lateral Profile Of Two-dimensional Electron Gas Charge Density In Type Iii Nitride Hemt Devices Using Ion Implantation Through Gray Scale Mask App 20130313611 - KHALIL; Sameh ; et al.	2013-11-28
HEMT GaN DEVICE WITH A NON-UNIFORM LATERAL TWO DIMENSIONAL ELECTRON GAS PROFILE AND METHOD OF MANUFACTURING THE SAME App 20130313612 - Khalil; Sameh ; et al.	2013-11-28
High current high voltage GaN field effect transistors and method of fabricating same Grant 8,530,978 - Chu , et al. September 10, 2	2013-09-10
III-Nitride Metal Insulator Semiconductor Field effect Transistor App 20130026495 - Chu; Rongming ; et al.	2013-01-31
ALGaN/GaN HYBRID MOS-HFET App 20130001646 - Corrion; Andrea ; et al.	2013-01-03
GaN HEMTs with a Back Gate Connected to the Source App 20120211800 - Boutros; Karim S	2012-08-23
Two stage plasma etching method for enhancement mode GaN HFET Grant 8,124,505 - Burnham , et al. February 28, 2	2012-02-28
Gallium nitride switch methodology Grant 7,893,791 - Ma , et al. February 22, 2	2011-02-22
Gallium Nitride Switch Methodology App 20100097119 - Ma; Yin Tat ; et al.	2010-04-22
Integrated semiconductor circuits on photo-active Germanium substrates Grant 7,151,307 - Boutros , et al. December 19, 2	2006-12-19
Quasi-optical array amplifier App 20060139739 - Higgins; J. Aiden ; et al.	2006-06-29
Integrated semiconductor circuits on photo-active Germanium substrates App 20050110041 - Boutros, Karim S. ; et al.	2005-05-26
Monolithic bypass-diode and solar-cell string assembly Grant 6,635,507 - Boutros , et al. October 21, 2	2003-10-21
Monolithic bypass-diode and solar-cell string assembly App 20020164834 - Boutros, Karim S. ; et al.	2002-11-07
Solar module array with reconfigurable tile Grant 6,350,944 - Sherif , et al. February 26, 2	2002-02-26

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