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name:-0.0023391246795654
name:-0.004310131072998
name:-0.0006411075592041
Bourget; Lawrence P. Patent Filings

Bourget; Lawrence P.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bourget; Lawrence P..The latest application filed is for "use of pulsed-dc wafer bias for filling vias/trenches with metal in hdp physical vapor deposition".

Company Profile
0.2.0
  • Bourget; Lawrence P. - Reading MA
  • Bourget; Lawrence P. - Winchester MA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
Grant 6,051,114 - Yao , et al. April 18, 2
2000-04-18
High growth rate plasma diamond deposition process and method of controlling same
Grant 5,405,645 - Sevillano , et al. April 11, 1
1995-04-11

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