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Patent applications and USPTO patent grants for Bour; Dave.The latest application filed is for "lateral gan jfet with vertical drift region".
Patent | Date |
---|---|
Lateral GaN JFET with vertical drift region Grant 9,472,684 - Nie , et al. October 18, 2 | 2016-10-18 |
GaN vertical bipolar transistor Grant 8,823,140 - Nie , et al. September 2, 2 | 2014-09-02 |
Gan Vertical Bipolar Transistor App 20140131837 - Nie; Hui ;   et al. | 2014-05-15 |
Lateral Gan Jfet With Vertical Drift Region App 20140131721 - Nie; Hui ;   et al. | 2014-05-15 |
Method And System For Edge Termination In Gan Materials By Selective Area Implantation Doping App 20140048903 - Edwards; Andrew ;   et al. | 2014-02-20 |
Heterojunction semiconductor device having an intermediate layer for providing an improved junction Grant 6,822,274 - Yi , et al. November 23, 2 | 2004-11-23 |
Heterojunction semiconductor device having an intermediate layer for providing an improved junction App 20040149994 - Yi, Sung Soo ;   et al. | 2004-08-05 |
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