loadpatents
name:-0.016936063766479
name:-0.021320104598999
name:-0.0077230930328369
Borodovsky; Yan A. Patent Filings

Borodovsky; Yan A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Borodovsky; Yan A..The latest application filed is for "ebeam universal cutter".

Company Profile
7.19.17
  • Borodovsky; Yan A. - Portland OR
  • Borodovsky; Yan A. - Fremont CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Cross scan proximity correction with ebeam universal cutter
Grant 10,747,115 - Borodovsky A
2020-08-18
Ebeam universal cutter
Grant 10,578,970 - Borodovsky , et al.
2020-03-03
Ebeam staggered beam aperture array
Grant 10,386,722 - Borodovsky , et al. A
2019-08-20
Underlying absorbing or conducting layer for Ebeam direct write (EBDW) lithography
Grant 10,338,474 - Tandon , et al.
2019-07-02
Ebeam Universal Cutter
App 20190155160 - BORODOVSKY; Yan A. ;   et al.
2019-05-23
Ebeam align on the fly
Grant 10,290,528 - Borodovsky , et al.
2019-05-14
Cross Scan Proximity Correction With Ebeam Universal Cutter
App 20190121236 - BORODOVSKY; YAN A.
2019-04-25
Fine alignment system for electron beam exposure system
Grant 10,236,161 - Borodovsky
2019-03-19
Ebeam universal cutter
Grant 10,216,087 - Borodovsky , et al. Feb
2019-02-26
Cross scan proximity correction with ebeam universal cutter
Grant 10,191,376 - Borodovsky Ja
2019-01-29
Ebeam three beam aperture array
Grant 10,067,416 - Borodovsky , et al. September 4, 2
2018-09-04
Unidirectional metal on layer with ebeam
Grant 10,014,256 - Nelson , et al. July 3, 2
2018-07-03
Ebeam Three Beam Aperture Array
App 20180143526 - BORODOVSKY; Yan A. ;   et al.
2018-05-24
Ebeam non-universal cutter
Grant 9,952,511 - Borodovsky , et al. April 24, 2
2018-04-24
Ebeam three beam aperture array
Grant 9,897,908 - Borodovsky , et al. February 20, 2
2018-02-20
Corner rounding correction for electron beam (Ebeam) direct write system
Grant 9,899,182 - Borodovsky February 20, 2
2018-02-20
Fine Alignment System For Electron Beam Exposure System
App 20180033593 - BORODOVSKY; Yan A.
2018-02-01
Underlying Absorbing or Conducting Layer for Ebeam Direct Write (EBDW) Lithography
App 20170338105 - TANDON; Shakul ;   et al.
2017-11-23
Cross Scan Proximity Correction With Ebeam Universal Cutter
App 20170269481 - BORODOVSKY; YAN A.
2017-09-21
Corner Rounding Correction For Electron Beam (ebeam) Direct Write System
App 20170271117 - BORODOVSKY; YAN A.
2017-09-21
Ebeam Universal Cutter
App 20170102615 - Borodovsky; Yan A. ;   et al.
2017-04-13
Ebeam Three Beam Aperture Array
App 20170076905 - BORODOVSKY; Yan A. ;   et al.
2017-03-16
Unidirectional Metal On Layer With Ebeam
App 20170077029 - NELSON; Donald W. ;   et al.
2017-03-16
Ebeam Align On The Fly
App 20170076967 - BORODOVSKY; Yan A. ;   et al.
2017-03-16
Ebeam Staggered Beam Aperture Array
App 20170076906 - BORODOVSKY; Yan A. ;   et al.
2017-03-16
Data Compression For Ebeam Throughput
App 20170069509 - NELSON; Donald W. ;   et al.
2017-03-09
Ebeam Non-universal Cutter
App 20170069461 - BORODOVSKY; Yan A. ;   et al.
2017-03-09
Method of creating a maskless air gap in back end interconnections with double self-aligned vias
Grant 9,324,652 - Chandhok , et al. April 26, 2
2016-04-26
Method Of Creating A Maskless Air Gap In Back End Interconnections With Double Self-aligned Vias
App 20150171012 - CHANDHOK; Manish ;   et al.
2015-06-18
Method of creating a maskless air gap in back end interconnects with double self-aligned vias
Grant 8,975,138 - Chandhok , et al. March 10, 2
2015-03-10
Method Of Creating A Maskless Air Gap In Back End Interconnects With Double Self-aligned Vias
App 20150001724 - CHANDHOK; Manish ;   et al.
2015-01-01
Method of producing semiconductor device layer layout
Grant 5,498,579 - Borodovsky , et al. March 12, 1
1996-03-12
Lithographic emhancement method and apparatus for randomly spaced structures
Grant 5,424,154 - Borodovsky June 13, 1
1995-06-13
Method for making integrated circuit devices using a layer of indium arsenide as an antireflective coating
Grant 4,529,685 - Borodovsky July 16, 1
1985-07-16

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed