Boos; John Bradley

Patent Applications and Registrations

Patent applications and USPTO patent grants for Boos; John Bradley.The latest application filed is for "vacuum transistor structure using graphene edge field emitter and screen electrode".

Company Profile

1.20.18

Boos; John Bradley - Springfield VA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Vacuum transistor structure using graphene edge field emitter and screen electrode Grant 10,192,979 - Shaw , et al. Ja	2019-01-29
Vacuum Transistor Structure Using Graphene Edge Field Emitter And Screen Electrode App 20170012103 - Shaw; Jonathan L. ; et al.	2017-01-12
Strained InGaAs quantum wells for complementary transistors Grant 9,054,169 - Bennett , et al. June 9, 2	2015-06-09
Low-resistivity p-type GaSb quantum wells Grant 9,006,708 - Bennett , et al. April 14, 2	2015-04-14
Strained InGaAs Quantum Wells for Complementary Transistors App 20150014745 - Bennett; Brian R. ; et al.	2015-01-15
Antimonide-based compound semiconductor with titanium tungsten stack Grant 8,927,354 - Chou , et al. January 6, 2	2015-01-06
Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices App 20140339501 - Bennett; Brian R. ; et al.	2014-11-20
Strained InGaAs quantum wells for complementary transistors Grant 8,884,265 - Bennett , et al. November 11, 2	2014-11-11
Strained InGaAs Quantum Wells for Complementary Transistors App 20140264278 - Bennett; Brian R. ; et al.	2014-09-18
Low-Resistivity p-Type GaSb Quantum Wells App 20140217363 - Bennett; Brian R. ; et al.	2014-08-07
n- and p-channel field effect transistors with single quantum well for complementary circuits Grant 8,652,959 - Bennett , et al. February 18, 2	2014-02-18
Antimonide-based Compound Semiconductor With Titanium Tungsten Stack App 20130210219 - CHOU; Yeong-Chang ; et al.	2013-08-15
n- and p-Channel Field Effect Transistors with Single Quantum Well for Complementary Circuits App 20130149845 - Bennett; Brian R. ; et al.	2013-06-13
N- and p-channel field-effect transistors with single quantum well for complementary circuits Grant 8,461,664 - Bennett , et al. June 11, 2	2013-06-11
Antimonide-based compound semiconductor with titanium tungsten stack Grant 8,421,121 - Chou , et al. April 16, 2	2013-04-16
P-N junction for use as an RF mixer from GHZ to THZ frequencies Grant 8,076,700 - Magno , et al. December 13, 2	2011-12-13
N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits App 20110297916 - Bennett; Brian R. ; et al.	2011-12-08
InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors Grant 7,635,879 - Boos , et al. December 22, 2	2009-12-22
P-N Junction for Use as an RF Mixer from GHZ to THZ Frequencies App 20090302352 - Magno; Richard ; et al.	2009-12-10
Antimonide-based compound semiconductor with titanium tungsten stack App 20080258176 - Chou; Yeong-Chang ; et al.	2008-10-23
High electron mobility transistors with Sb-based channels Grant 7,388,235 - Boos , et al. June 17, 2	2008-06-17
High electron mobility transistors with Sb-based channels App 20060076577 - Boos; John Bradley ; et al.	2006-04-13
InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors App 20060065952 - Boos; John Bradley ; et al.	2006-03-30
Metalization of electronic semiconductor devices Grant 6,448,648 - Boos September 10, 2	2002-09-10
Modified InAs hall elements Grant 6,316,124 - Boos , et al. November 13, 2	2001-11-13
Electronic devices with InAlAsSb/AlSb barrier Grant 5,798,540 - Boos , et al. August 25, 1	1998-08-25

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