loadpatents
name:-0.018791198730469
name:-0.0066370964050293
name:-0.0061080455780029
Bomberger; Cory Patent Filings

Bomberger; Cory

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bomberger; Cory.The latest application filed is for "top gate recessed channel cmos thin film transistor in the back end of line and methods of fabrication".

Company Profile
9.6.22
  • Bomberger; Cory - Portland OR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Germanium-rich nanowire transistor with relaxed buffer layer
Grant 11,450,739 - Glass , et al. September 20, 2
2022-09-20
Top Gate Recessed Channel Cmos Thin Film Transistor In The Back End Of Line And Methods Of Fabrication
App 20220223519 - Dewey; Gilbert ;   et al.
2022-07-14
Source or drain structures with contact etch stop layer
Grant 11,374,100 - Bomberger , et al. June 28, 2
2022-06-28
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication
Grant 11,328,988 - Dewey , et al. May 10, 2
2022-05-10
Three-dimensional Integrated Circuits (3dics) Including Bottom Gate Mos Transistors With Monocrystalline Channel Material
App 20220093586 - Huang; Cheng-Ying ;   et al.
2022-03-24
Device, method and system for promoting channel stress in a NMOS transistor
Grant 11,264,501 - Mehandru , et al. March 1, 2
2022-03-01
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material
Grant 11,244,943 - Huang , et al. February 8, 2
2022-02-08
Source Or Drain Structures With High Germanium Concentration Capping Layer
App 20210407851 - BOMBERGER; Cory ;   et al.
2021-12-30
Source Or Drain Structures With High Surface Germanium Concentration
App 20210408275 - BOMBERGER; Cory ;   et al.
2021-12-30
Gate-all-around Integrated Circuit Structures Having Strained Source Or Drain Structures On Insulator
App 20210408283 - AGRAWAL; Ashish ;   et al.
2021-12-30
Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material
Grant 11,164,785 - Agrawal , et al. November 2, 2
2021-11-02
Three-dimensional Integrated Circuits (3dics) Including Upper-level Transistors With Epitaxial Source & Drain Material
App 20210202319 - Agrawal; Ashish ;   et al.
2021-07-01
Three-dimensional Integrated Circuits (3dics) Including Bottom Gate Mos Transistors With Monocrystalline Channel Material
App 20210202476 - Huang; Cheng-Ying ;   et al.
2021-07-01
Top Gate Recessed Channel Cmos Thin Film Transistor In The Back End Of Line And Methods Of Fabrication
App 20210202378 - Dewey; Gilbert ;   et al.
2021-07-01
Fin Smoothing And Integrated Circuit Structures Resulting Therefrom
App 20210167210 - BOMBERGER; Cory ;   et al.
2021-06-03
Thin Film Transistor Structures With Regrown Source & Drain
App 20210036023 - Agrawal; Ashish ;   et al.
2021-02-04
Source Or Drain Structures With Low Resistivity
App 20200312959 - BOMBERGER; Cory ;   et al.
2020-10-01
Gate-all-around Integrated Circuit Structures Having Germanium Nanowire Channel Structures
App 20200312981 - BOMBERGER; Cory ;   et al.
2020-10-01
Gate-all-around Integrated Circuit Structures Having Embedded Gesnb Source Or Drain Structures
App 20200312960 - BOMBERGER; Cory ;   et al.
2020-10-01
Gate-all-around Integrated Circuit Structures Having Source Or Drain Structures With Epitaxial Nubs
App 20200303502 - BOMBERGER; Cory ;   et al.
2020-09-24
Device, Method And System For Promoting Channel Stress In A Nmos Transistor
App 20200227558 - Mehandru; Rishabh ;   et al.
2020-07-16
Integrated Circuit Structures With Source Or Drain Dopant Diffusion Blocking Layers
App 20200219975 - BOMBERGER; Cory ;   et al.
2020-07-09
Germanium-rich Nanowire Transistor With Relaxed Buffer Layer
App 20200091287 - Glass; Glenn ;   et al.
2020-03-19
Source Or Drain Structures With Contact Etch Stop Layer
App 20200006504 - BOMBERGER; Cory ;   et al.
2020-01-02
Channel Structures With Sub-fin Dopant Diffusion Blocking Layers
App 20200006332 - BOMBERGER; Cory ;   et al.
2020-01-02
Source Or Drain Structures With Relatively High Germanium Content
App 20200006491 - BOMBERGER; Cory ;   et al.
2020-01-02

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