loadpatents
name:-0.0092110633850098
name:-0.0065920352935791
name:-0.003925085067749
Bolkhovsky; Vladimir Patent Filings

Bolkhovsky; Vladimir

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bolkhovsky; Vladimir.The latest application filed is for "semiconductor surface passivation".

Company Profile
3.5.7
  • Bolkhovsky; Vladimir - Framingham MA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor surface passivation
Grant 10,825,950 - Gregory , et al. November 3, 2
2020-11-03
Superconducting integrated circuit
Grant 10,658,424 - Oliver , et al.
2020-05-19
Semiconductor Surface Passivation
App 20190371855 - Gregory; James ;   et al.
2019-12-05
Superconducting Integrated Circuit
App 20180247974 - Oliver; William D. ;   et al.
2018-08-30
Premature breakdown in submicron device geometries
Grant 7,195,965 - Lin , et al. March 27, 2
2007-03-27
Bladed silicon-on-insulator semiconductor devices and method of making
App 20040222485 - Haynie, Sheldon D. ;   et al.
2004-11-11
Bladed silicon-on-insulator semiconductor devices and method of making
Grant 6,800,917 - Haynie , et al. October 5, 2
2004-10-05
Bladed silicon-on-insulator semiconductor devices and method of making
Grant 6,797,547 - Haynie , et al. September 28, 2
2004-09-28
Bladed silicon-on-insulator semiconductor devices and method of making
App 20040129976 - Haynie, Sheldon D. ;   et al.
2004-07-08
Bladed silicon-on-insulator semiconductor devices and method of making
App 20040113223 - Haynie, Sheldon D. ;   et al.
2004-06-17
Premature breakdown in submicron device geometries
App 20040079991 - Lin, John ;   et al.
2004-04-29
Method for manufacturing a semiconductor device using dummy openings in a photoresist material and an LDMOS device manufactured in accordance with the method
App 20040079974 - Lin, John ;   et al.
2004-04-29

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