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Patent applications and USPTO patent grants for Bojarczuk, Nestor Alexander JR..The latest application filed is for "method of forming lattice-matched structure on silicon and structure formed thereby".
Patent | Date |
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Method of forming lattice-matched structure on silicon and structure formed thereby App 20050266663 - Bojarczuk, Nestor Alexander JR. ;   et al. | 2005-12-01 |
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier App 20050156257 - Bojarczuk, Nestor Alexander JR. ;   et al. | 2005-07-21 |
Method of forming lattice-matched structure on silicon and structure formed thereby App 20050095815 - Bojarczuk, Nestor Alexander JR. ;   et al. | 2005-05-05 |
Method of forming lattice-matched structure on silicon and structure formed thereby App 20030008520 - Bojarczuk, Nestor Alexander JR. ;   et al. | 2003-01-09 |
Method of forming lattice-matched structure on silicon and structure formed thereby App 20030008521 - Bojarczuk, Nestor Alexander JR. ;   et al. | 2003-01-09 |
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