Bohyama; Shinya
Patent Applications and Registrations
Patent applications and USPTO patent grants for Bohyama; Shinya.The latest application filed is for "substrate of gallium nitride single crystal and process for producing the same".
- Bohyama; Shinya - Ichishi-gun JP
- Bohyama; Shinya - Mie JP
| Patent | Date |
|---|---|
| Substrate of gallium nitride single crystal and process for producing the same Grant 7,399,687 - Hiramatsu , et al. July 15, 2 | 2008-07-15 |
| Substrate of gallium nitride single crystal and process for producing the same App 20060172512 - Hiramatsu; Kazumasa ; et al. | 2006-08-03 |
| Method of manufacturing III-V group compound semiconductor Grant 6,946,308 - Hiramatsu , et al. September 20, 2 | 2005-09-20 |
| Method for fabricating III-V group compound semiconductor Grant 6,756,246 - Hiramatsu , et al. June 29, 2 | 2004-06-29 |
| Method of manufacturing III-V group compound semiconductor App 20030211710 - Hiramatsu, Kazumasa ; et al. | 2003-11-13 |
| Method for fabricating III-V Group compound semiconductor App 20030045017 - Hiramatsu, Kazumasa ; et al. | 2003-03-06 |
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