loadpatents
name:-0.01258397102356
name:-0.013780117034912
name:-0.0011568069458008
Boeve; Hans Patent Filings

Boeve; Hans

Patent Applications and Registrations

Patent applications and USPTO patent grants for Boeve; Hans.The latest application filed is for "programmable phase-change memory and method therefor".

Company Profile
0.13.10
  • Boeve; Hans - Hechtel-Eksel N/A BE
  • Boeve; Hans - Valkenswaard NL
  • Boeve, Hans - MH Valkenswaard NL
  • Boeve, Hans - Wervik BE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Non-volatile memory
Grant 9,496,490 - Boeve , et al. November 15, 2
2016-11-15
Sensor for sensing accelerations
Grant 8,862,422 - Ikkink , et al. October 14, 2
2014-10-14
Programmable phase-change memory and method therefor
Grant 8,503,226 - Boeve , et al. August 6, 2
2013-08-06
Programmable Phase-change Memory And Method Therefor
App 20120230100 - BOEVE; HANS ;   et al.
2012-09-13
Programmable phase-change memory and method therefor
Grant 8,208,293 - Boeve , et al. June 26, 2
2012-06-26
Magnetic field sensor
Grant 8,150,639 - Ikkink , et al. April 3, 2
2012-04-03
System comprising a generating device and a comparing device
Grant 8,069,004 - Boeve , et al. November 29, 2
2011-11-29
Non-volatile Memory
App 20100127232 - Boeve; Hans ;   et al.
2010-05-27
Programmable Phase-change Memory And Method Therefor
App 20100039856 - Boeve; Hans ;   et al.
2010-02-18
Magneto-resistive Sensor
App 20100033175 - Boeve; Hans ;   et al.
2010-02-11
Sensor For Sensing Accelerations
App 20100010771 - Ikkink; Teunis ;   et al.
2010-01-14
Magnetic Field Sensor
App 20090281739 - Ikkink; Teunis ;   et al.
2009-11-12
Digital magnetic storage cell device
Grant 7,230,290 - Boeve June 12, 2
2007-06-12
Digital magnetic memory cell device
Grant 7,053,428 - Boeve May 30, 2
2006-05-30
Layer system having an increased magnetoresistive effect and use of the same, wherein a first layer of an artificial antiferromagnet has a relatively low cobalt content
Grant 6,970,333 - Boeve November 29, 2
2005-11-29
Layer system having an increased magnetoresistive effect and use of the same
App 20040233585 - Boeve, Hans
2004-11-25
Digital magnetic storage cell device
App 20040188731 - Boeve, Hans
2004-09-30
Spin-valve structure and method for making spin-valve structures
App 20040169965 - Attenborough, Karen ;   et al.
2004-09-02
Digital magnetic storage cell device
App 20040165423 - Boeve, Hans
2004-08-26
Spin-valve structure and method for making spin-valve structures
Grant 6,721,141 - Attenborough , et al. April 13, 2
2004-04-13

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