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Patent applications and USPTO patent grants for Boden; Milton J..The latest application filed is for "trench mosgated device with deep trench between gate trenches".
Patent | Date |
---|---|
Trench MOSgated device with deep trench between gate trenches Grant 8,125,024 - Boden February 28, 2 | 2012-02-28 |
P channel Rad Hard MOSFET with enhancement implant Grant 7,547,585 - Boden June 16, 2 | 2009-06-16 |
Trench Mosgated Device With Deep Trench Between Gate Trenches App 20080211016 - Boden; Milton J. | 2008-09-04 |
Alternating implant ring terminations Grant 6,965,130 - Boden November 15, 2 | 2005-11-15 |
Silicide gate process for trench MOSFET App 20030168695 - Sodhi, Ritu ;   et al. | 2003-09-11 |
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