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Patent applications and USPTO patent grants for Block; Mayumi.The latest application filed is for "nitride plasma etch with highly tunable selectivity to oxide".
Patent | Date |
---|---|
Method for dielectric material removal between conductive lines Grant 8,114,780 - Block , et al. February 14, 2 | 2012-02-14 |
Nitride Plasma Etch With Highly Tunable Selectivity To Oxide App 20110223770 - Jensen; Alan ;   et al. | 2011-09-15 |
Wafer electrical discharge control using argon free dechucking gas Grant 7,892,445 - Wei , et al. February 22, 2 | 2011-02-22 |
Method For Dielectric Material Removal Between Conductive Lines App 20100248485 - Block; Mayumi ;   et al. | 2010-09-30 |
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