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name:-0.017661094665527
name:-0.010839939117432
name:-0.00038886070251465
Bito; Yasunori Patent Filings

Bito; Yasunori

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bito; Yasunori.The latest application filed is for "semiconductor device and method of manufacturing the same".

Company Profile
0.12.13
  • Bito; Yasunori - Kanagawa JP
  • Bito; Yasunori - Tokyo JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Field effect transistor, method of manufacturing the same, and semiconductor device
Grant 8,587,027 - Bito November 19, 2
2013-11-19
Field effect transistor capable of reducing shift of threshold voltage
Grant 8,421,120 - Bito April 16, 2
2013-04-16
Field effect transistor
Grant 8,299,499 - Aoike , et al. October 30, 2
2012-10-30
Protective element and semiconductor device
Grant 8,253,218 - Bito August 28, 2
2012-08-28
Semiconductor device having stacked InGaP and GaAs layers, and method of making same
Grant 8,217,424 - Yoshinaga , et al. July 10, 2
2012-07-10
Semiconductor device and method of manufacturing the same
App 20120126288 - Bito; Yasunori
2012-05-24
Semiconductor Device Having A Heterojunction Biopolar Transistor And A Field Effect Transistor
App 20110316050 - BITO; YASUNORI
2011-12-29
Semiconductor device
Grant 8,067,788 - Bito November 29, 2
2011-11-29
Protective Element And Semiconductor Device
App 20110193191 - BITO; Yasunori
2011-08-11
Field Effect Transistor
App 20100140672 - AOIKE; Masayuki ;   et al.
2010-06-10
Semiconductor Device And Method For Manufacturing Semiconductor Device
App 20100052013 - YOSHINAGA; Yasuyuki ;   et al.
2010-03-04
Field effect transistor, method of manufacturing the same, and semiconductor device
App 20100001318 - Bito; Yasunori
2010-01-07
Field effect transistor
Grant 7,456,444 - Bito November 25, 2
2008-11-25
Semiconductor Device
App 20080237638 - BITO; Yasunori
2008-10-02
Field Effect Transistor And Method For Manufacturing Same
App 20070284568 - BITO; Yasunori
2007-12-13
Field effect transistor
App 20070045663 - Bito; Yasunori
2007-03-01
Heterojunction field effect type semiconductor device having high gate turn-on voltage and low on-resistance and its manufacturing method
Grant 7,071,499 - Bito July 4, 2
2006-07-04
Heterojunction field effect type semiconductor device having high gate turn-on voltage and low on-resistance and its manufacturing method
App 20040104404 - Bito, Yasunori
2004-06-03
Field effect transistor
Grant 6,624,440 - Bito , et al. September 23, 2
2003-09-23
Field Effect Transistor
App 20020074563 - BITO, YASUNORI ;   et al.
2002-06-20
Field effect transistor
App 20020053682 - Bito, Yasunori ;   et al.
2002-05-09
Field effect transistor
App 20010005016 - Bito, Yasunori ;   et al.
2001-06-28
Semiconductor device capable of reducing leak current and having excellent pinch-off characteristic and method of manufacturing the same
Grant 6,025,613 - Bito , et al. February 15, 2
2000-02-15

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