loadpatents
name:-0.011987209320068
name:-0.0094940662384033
name:-0.00062704086303711
Bidal; Gregory Patent Filings

Bidal; Gregory

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bidal; Gregory.The latest application filed is for "mos transistor structure, in particular for high voltages using a technology of the silicon-on-insulator type".

Company Profile
0.10.11
  • Bidal; Gregory - Grenoble FR
  • Bidal; Gregory - Eindhoven NL
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
MOS transistor and method of manufacturing the same
Grant 9,941,416 - Bidal April 10, 2
2018-04-10
Method of manufacturing a device with MOS transistors
Grant 9,876,032 - Chhun , et al. January 23, 2
2018-01-23
Mos Transistor Structure, In Particular For High Voltages Using A Technology Of The Silicon-on-insulator Type
App 20170317106 - Boivin; Philippe ;   et al.
2017-11-02
Process for producing, from an SOI and in particular an FDSOI type substrate, transistors having gate oxides of different thicknesses, and corresponding integrated circuit
Grant 9,786,755 - Golanski , et al. October 10, 2
2017-10-10
Method Of Manufacturing A Device With Mos Transistors
App 20170117296 - Chhun; Sonarith ;   et al.
2017-04-27
Mos Transistor And Method Of Manufacturing The Same
App 20170069764 - Bidal; Gregory
2017-03-09
MOS transistor and method of manufacturing the same
Grant 9,530,686 - Bidal December 27, 2
2016-12-27
Method Of Formation Of A Substrate Of The Soi, In Particular The Fdsoi, Type Adapted To Transistors Having Gate Dielectrics Of Different Thicknesses, Corresponding Substrate And Integrated Circuit
App 20160284807 - Petit; David ;   et al.
2016-09-29
Process For Producing, From An Soi And In Particular An Fdsoi Type Substrate, Transistors Having Gate Oxides Of Different Thicknesses, And Corresponding Integrated Circuit
App 20160276451 - Golanski; Dominique ;   et al.
2016-09-22
Integrated circuit comprising an isolating trench and corresponding method
Grant 9,117,876 - Bidal , et al. August 25, 2
2015-08-25
Method for manufacturing MOS transistors with different types of gate stacks
Grant 8,912,067 - Huguenin , et al. December 16, 2
2014-12-16
Integrated Circuit Comprising An Isolating Trench And Corresponding Method
App 20140342524 - Bidal; Gregory ;   et al.
2014-11-20
Integrated circuit comprising an isolating trench and corresponding method
Grant 8,829,622 - Bidal , et al. September 9, 2
2014-09-09
Method For Manufacturing Insulated-gate Transistors
App 20130099322 - Perrin; Emmanuel ;   et al.
2013-04-25
Integrated Circuit Comprising An Isolating Trench And Corresponding Method
App 20120319206 - Bidal; Gregory ;   et al.
2012-12-20
Quantum-dot device and position-controlled quantum-dot-fabrication method
Grant 8,288,754 - Bidal , et al. October 16, 2
2012-10-16
Method For Manufacturing Mos Transistors With Different Types Of Gate Stacks
App 20120083110 - Huguenin; Jean-Luc ;   et al.
2012-04-05
Quantum-dot Device And Position-controlled Quantum-dot-fabrication Method
App 20110006280 - Bidal; Gregory ;   et al.
2011-01-13
Method Of Fabricating A Transistor With Semiconductor Gate Combined Locally With A Metal
App 20100102402 - Muller; Markus ;   et al.
2010-04-29

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