loadpatents
name:-0.020864963531494
name:-0.011133909225464
name:-0.0006258487701416
Bhatia; Ritwik Patent Filings

Bhatia; Ritwik

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bhatia; Ritwik.The latest application filed is for "formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations".

Company Profile
0.8.8
  • Bhatia; Ritwik - Newtonville MA
  • Bhatia; Ritwik - Newton MA
  • Bhatia; Ritwik - Albany NY
  • Bhatia; Ritwik - Sunnyvale CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
Grant 10,090,153 - Hawryluk , et al. October 2, 2
2018-10-02
Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
Grant 9,929,011 - Hawryluk , et al. March 27, 2
2018-03-27
Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
Grant 9,768,016 - Hawryluk , et al. September 19, 2
2017-09-19
Formation Of Heteroepitaxial Layers With Rapid Thermal Processing To Remove Lattice Dislocations
App 20170256394 - Hawryluk; Andrew M. ;   et al.
2017-09-07
Formation Of Heteroepitaxial Layers With Rapid Thermal Processing To Remove Lattice Dislocations
App 20170250070 - Hawryluk; Andrew M. ;   et al.
2017-08-31
Pe-ald Methods With Reduced Quartz-based Contamination
App 20170241019 - Sowa; Mark J. ;   et al.
2017-08-24
Masking methods for ALD processes for electrode-based devices
Grant 9,633,850 - Bhatia April 25, 2
2017-04-25
Masking methods for ALD processes for electrode-based devices
App 20170025272 - Bhatia; Ritwik
2017-01-26
Formation Of Heteroepitaxial Layers With Rapid Thermal Processing To Remove Lattice Dislocations
App 20160155629 - Hawryluk; Andrew M. ;   et al.
2016-06-02
Decreasing the etch rate of silicon nitride by carbon addition
Grant 7,951,730 - Bhatia , et al. May 31, 2
2011-05-31
Advanced multilayer dielectric cap with improved mechanical and electrical properties
Grant 7,737,052 - Bhatia , et al. June 15, 2
2010-06-15
Advanced Multilayer Dielectric Cap With Improved Mechanical And Electrical Properties
App 20090224374 - Bhatia; Ritwik ;   et al.
2009-09-10
Decreasing The Etch Rate Of Silicon Nitride By Carbon Addition
App 20090137132 - Bhatia; Ritwik ;   et al.
2009-05-28
Decreasing the etch rate of silicon nitride by carbon addition
Grant 7,501,355 - Bhatia , et al. March 10, 2
2009-03-10
Decreasing the etch rate of silicon nitride by carbon addition
App 20080014761 - Bhatia; Ritwik ;   et al.
2008-01-17
Boron diffusion barrier by nitrogen incorporation in spacer dielectrics
Grant 7,132,353 - Xia , et al. November 7, 2
2006-11-07

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed