Besser; Paul Raymond

Patent Applications and Registrations

Patent applications and USPTO patent grants for Besser; Paul Raymond.The latest application filed is for "electrode for correlated electron device".

Company Profile

13.20.17

Besser; Paul Raymond - Sunnyvale CA
Besser; Paul Raymond - Austin TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Correlated electron material (CEM) devices with contact region sidewall insulation Grant 11,075,339 - He , et al. July 27, 2	2021-07-27
Electrode For Correlated Electron Device App 20210226124 - He; Ming ; et al.	2021-07-22
Dopant Activation Anneal For Correlated Electron Device App 20210066593 - He; Ming ; et al.	2021-03-04
Formation of correlated electron material (CEM) devices with restored sidewall regions Grant 10,854,811 - Besser , et al. December 1, 2	2020-12-01
Multi-Layered Structure Having a Barrier Layer App 20200357996 - He; Ming ; et al.	2020-11-12
Method for fabrication of a CEM device Grant 10,833,271 - He , et al. November 10, 2	2020-11-10
Fabrication Of Correlated Electron Material (cem) Devices App 20200295259 - He; Ming ; et al.	2020-09-17
Correlated Electron Switch Device Sidewall Restoration App 20200295260 - Huang; Xueming ; et al.	2020-09-17
Method For Fabrication Of A Cem Device App 20200259083 - A1	2020-08-13
Fabrication Of Correlated Electron Material (cem) Devices App 20200176676 - He; Ming ; et al.	2020-06-04
Fabrication of correlated electron material (CEM) devices Grant 10,672,982 - He , et al.	2020-06-02
Correlated Electron Material (cem) Devices With Contact Region Sidewall Insulation App 20200127200 - He; Ming ; et al.	2020-04-23
Formation Of Correlated Electron Material (cem) Devices With Restored Sidewall Regions App 20200127196 - Besser; Paul Raymond ; et al.	2020-04-23
Method for fabrication of a CEM device Grant 10,566,527 - He , et al. Feb	2020-02-18
Method For Fabrication Of A Cem Device App 20190296236 - HE; Ming ; et al.	2019-09-26
Method For Fabrication Of A Cem Device App 20190296232 - HE; Ming ; et al.	2019-09-26
Method For Fabrication Of A Cem Device App 20190296231 - HE; Ming ; et al.	2019-09-26
Fabrication Of Correlated Electron Material Devices App 20180216228 - Besser; Paul Raymond ; et al.	2018-08-02
Multilayer Film Including A Tantalum And Titanium Alloy As A Scalable Barrier Diffusion Layer For Copper Interconnects App 20170170114 - Besser; Paul Raymond ; et al.	2017-06-15
Method for integrating germanides in high performance integrated circuits Grant 9,553,031 - Besser , et al. January 24, 2	2017-01-24
Air gap spacer integration for improved fin device performance Grant 9,515,156 - Besser , et al. December 6, 2	2016-12-06
Contact integration for reduced interface and series contact resistance Grant 9,484,251 - Besser , et al. November 1, 2	2016-11-01
Air Gap Spacer Integration For Improved Fin Device Performance App 20160111515 - Besser; Paul Raymond ; et al.	2016-04-21
Aggressive cleaning process for semiconductor device contact formation Grant 7,476,604 - Cheng , et al. January 13, 2	2009-01-13
Semiconductor component and method of manufacture Grant 7,319,065 - Yu , et al. January 15, 2	2008-01-15
Memory device having a nanocrystal charge storage region and method Grant 7,309,650 - Wang , et al. December 18, 2	2007-12-18
Method of manufacturing semiconductor device having nickel silicide with reduced interface roughness Grant 6,967,160 - Paton , et al. November 22, 2	2005-11-22
Cu capping layer deposition with improved integrated circuit reliability Grant 6,897,144 - Ngo , et al. May 24, 2	2005-05-24
Nickel silicide with reduced interface roughness Grant 6,873,051 - Paton , et al. March 29, 2	2005-03-29
Methods for improved metal gate fabrication Grant 6,773,978 - Besser , et al. August 10, 2	2004-08-10
Method and device using silicide contacts for semiconductor processing Grant 6,689,688 - Besser , et al. February 10, 2	2004-02-10
Method and device using silicide contacts for semiconductor processing App 20030235981 - Paton, Eric ; et al.	2003-12-25
Method and device using silicide contacts for semiconductor processing App 20030235984 - Besser, Paul Raymond ; et al.	2003-12-25
Method of forming nitride capped Cu lines with reduced electromigration along the Cu/nitride interface Grant 6,429,128 - Besser , et al. August 6, 2	2002-08-06
Formation of junctions by diffusion from a doped amorphous silicon film during silicidation Grant 6,169,005 - Kepler , et al. January 2, 2	2001-01-02
Silicidation with silicon buffer layer and silicon spacers Grant 6,100,145 - Kepler , et al. August 8, 2	2000-08-08
Formation of junctions by diffusion from a doped film into and through a silicide during silicidation Grant 6,096,599 - Kepler , et al. August 1, 2	2000-08-01

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.