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name:-0.0027170181274414
name:-0.010349035263062
name:-0.090713024139404
Bertrand; Jacques J. Patent Filings

Bertrand; Jacques J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bertrand; Jacques J..The latest application filed is for "method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing".

Company Profile
0.8.1
  • Bertrand; Jacques J. - Capitola CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Trenches to reduce lateral silicide growth in integrated circuit technology
Grant 7,023,059 - Chan , et al. April 4, 2
2006-04-04
Two-step process for nickel deposition
Grant 6,841,449 - Bertrand , et al. January 11, 2
2005-01-11
Titanium barrier for nickel silicidation of a gate electrode
Grant 6,730,587 - Bertrand , et al. May 4, 2
2004-05-04
Two-step process for nickel deposition
Grant 6,632,740 - Bertrand , et al. October 14, 2
2003-10-14
Stacked double sidewall spacer oxide over nitride
Grant 6,627,504 - Bertrand , et al. September 30, 2
2003-09-30
Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing
Grant 6,605,513 - Paton , et al. August 12, 2
2003-08-12
Process for forming fully silicided gates
Grant 6,562,718 - Xiang , et al. May 13, 2
2003-05-13
Cobalt barrier for nickel silicidation of a gate electrode
Grant 6,541,866 - Bertrand , et al. April 1, 2
2003-04-01
Method Of Forming Nickel Silicide Using A One-step Rapid Thermal Anneal Process And Backend Processing
App 20020068408 - Paton, Eric N. ;   et al.
2002-06-06

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