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name:-0.0086009502410889
name:-0.0018601417541504
Bera; Lakshmi Kanta Patent Filings

Bera; Lakshmi Kanta

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bera; Lakshmi Kanta.The latest application filed is for "self-aligning source, drain and gate process for iii-v nitride mishemts".

Company Profile
1.7.10
  • Bera; Lakshmi Kanta - Singapore SG
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Self-aligning source, drain and gate process for III-V nitride MISHEMTs
Grant 10,679,860 - Bera , et al.
2020-06-09
Semiconductor device fabrication
Grant 9,972,709 - Bera , et al. May 15, 2
2018-05-15
Semiconductor device fabrication
Grant 9,954,088 - Bera , et al. April 24, 2
2018-04-24
Self-aligning Source, Drain And Gate Process For Iii-v Nitride Mishemts
App 20180033631 - Bera; Lakshmi Kanta ;   et al.
2018-02-01
Semiconductor Device Fabrication
App 20170222030 - Bera; Lakshmi Kanta ;   et al.
2017-08-03
Semiconductor Device Fabrication
App 20160233325 - BERA; Lakshmi Kanta ;   et al.
2016-08-11
Method For Straining A Semiconductor Wafer And A Wafer Substrate Unit Used Therein
App 20100052064 - Lo; Guo-Qiang ;   et al.
2010-03-04
Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof
Grant 7,514,360 - Yu , et al. April 7, 2
2009-04-07
Method of fabricating tensile strained layers and compressive strain layers for a CMOS device
Grant 7,439,165 - Lo , et al. October 21, 2
2008-10-21
Gate electrode architecture for improved work function tuning and method of manufacture
Grant 7,397,090 - Mathew , et al. July 8, 2
2008-07-08
Stacked silicon-germanium nanowire structure and method of forming the same
App 20080135949 - Lo; Guo Qiang ;   et al.
2008-06-12
Method of fabricating strained channel devices
App 20060226483 - Lo; Patrick Guo Oiang ;   et al.
2006-10-12
Gate Electrode Architecture for Improved Work Function Tuning and Method of Manufacture
App 20050275035 - Mathew, Shajan ;   et al.
2005-12-15
Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof
App 20050205947 - Yu, Hong Yu ;   et al.
2005-09-22
Salicide process for metal gate CMOS devices
App 20050164460 - Mathew, Shajan ;   et al.
2005-07-28
Low temperature resist trimming process
Grant 6,716,570 - Nagarajan , et al. April 6, 2
2004-04-06
Low temperature resist trimming process
App 20030219683 - Nagarajan, Ranganathan ;   et al.
2003-11-27

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