Bensahel; Daniel

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bensahel; Daniel.The latest application filed is for "method for making a semi-conducting substrate located on an insulation layer".

Company Profile

0.30.17

Bensahel; Daniel - Grenoble FR
Bensahel; Daniel - 38000 Gremble FR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for making a semi-conducting substrate located on an insulation layer Grant 9,356,094 - Halimaoui , et al. May 31, 2	2016-05-31
Method for forming integrated circuits on a strained semiconductor substrate Grant 8,906,776 - Bensahel , et al. December 9, 2	2014-12-09
Method For Making A Semi-conducting Substrate Located On An Insulation Layer App 20130264678 - Halimaoui; Aomar ; et al.	2013-10-10
Method for making a semi-conducting substrate located on an insulation layer Grant 8,536,027 - Halimaoui , et al. September 17, 2	2013-09-17
Single-crystal semiconductor layer with heteroatomic macro-network Grant 8,263,965 - Campidelli , et al. September 11, 2	2012-09-11
Method For Forming Integrated Circuits On A Strained Semiconductor Substrate App 20120094470 - Bensahel; Daniel ; et al.	2012-04-19
Process for transferring a layer of strained semiconductor material Grant 8,049,224 - Ghyselen , et al. November 1, 2	2011-11-01
Single-crystal Semiconductor Layer With Heteroatomic Macro-network App 20110108801 - Bensahel; Daniel ; et al.	2011-05-12
Single-crystal semiconductor layer with heteroatomic macronetwork Grant 7,884,352 - Bensahel , et al. February 8, 2	2011-02-08
Electronic component manufacturing method Grant 7,879,679 - Kermarrec , et al. February 1, 2	2011-02-01
Process For Transferring A Layer Of Strained Semiconductor Material App 20100314628 - Ghyselen; Bruno ; et al.	2010-12-16
Process for transferring a layer of strained semiconductor material Grant 7,803,694 - Ghyselen , et al. September 28, 2	2010-09-28
Process for transferring a layer of strained semiconductor material Grant 7,534,701 - Ghyselen , et al. May 19, 2	2009-05-19
Process For Transferring A Layer Of Strained Semiconductor Material App 20080265261 - Ghyselen; Bruno ; et al.	2008-10-30
Electronic Component Manufacturing Method App 20080239625 - Kermarrec; Oliver ; et al.	2008-10-02
Process For Transferring A Layer Of Strained Semiconductor Material App 20080164492 - Ghyselen; Bruno ; et al.	2008-07-10
Heteroatomic single-crystal layers Grant 7,381,267 - Bensahel , et al. June 3, 2	2008-06-03
Process for transferring a layer of strained semiconductor material Grant 7,338,883 - Ghyselen , et al. March 4, 2	2008-03-04
Single-Crystal Semiconductor Layer with Heteroatomic Macronetwork App 20070248818 - Bensahel; Daniel ; et al.	2007-10-25
Process for fabricating strained layers of silicon or of a silicon/germanium alloy Grant 7,279,404 - Halimaoui , et al. October 9, 2	2007-10-09
Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material Grant 7,129,563 - Cosnier , et al. October 31, 2	2006-10-31
Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate Grant 7,033,438 - Bensahel April 25, 2	2006-04-25
Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit Grant 6,989,570 - Skotnicki , et al. January 24, 2	2006-01-24
Method for forming a localized region of a material difficult to etch Grant 6,969,661 - Halimaoui , et al. November 29, 2	2005-11-29
Process for transferring a layer of strained semiconductor material App 20050255682 - Ghyselen, Bruno ; et al.	2005-11-17
Process for transferring a layer of strained semiconductor material Grant 6,953,736 - Ghyselen , et al. October 11, 2	2005-10-11
Process for fabricating strained layers of silicon or of a silicon/germanium alloy App 20050037599 - Halimaoui, Aomar ; et al.	2005-02-17
Method for forming a localized region of a material difficult to etch App 20050026457 - Halimaoui, Aomar ; et al.	2005-02-03
Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material App 20040256699 - Cosnier, Vincent ; et al.	2004-12-23
Heteroatomic single-crystal layers App 20040250752 - Bensahel, Daniel ; et al.	2004-12-16
Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit App 20040188760 - Skotnicki, Thomas ; et al.	2004-09-30
Process for transferring a layer of strained semiconductor material App 20040053477 - Ghyselen, Bruno ; et al.	2004-03-18
Method for making a device comprising layers of planes of quantum dots Grant 6,690,027 - Bensahel , et al. February 10, 2	2004-02-10
Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate App 20040016395 - Bensahel, Daniel	2004-01-29
Forming of quantum dots Grant 6,596,555 - Bensahel , et al. July 22, 2	2003-07-22
Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained Grant 6,537,370 - Hernandez , et al. March 25, 2	2003-03-25
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained Grant 6,429,098 - Bensahel , et al. August 6, 2	2002-08-06
Forming of quantum dots App 20020039833 - Bensahel, Daniel ; et al.	2002-04-04
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively Grant 6,117,750 - Bensahel , et al. September 12, 2	2000-09-12
Process for selectively depositing a refractory metal silicide on silicon, and silicon wafer metallized using this process Grant 5,876,796 - Regolini , et al. March 2, 1	1999-03-02
Method for cleaning the surface of a substrate with plasma Grant 5,252,181 - Dutartre , et al. October 12, 1	1993-10-12
Process for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallization Grant 4,725,561 - Haond , et al. February 16, 1	1988-02-16
Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects Grant 4,678,538 - Haond , et al. July 7, 1	1987-07-07
Method for the manufacture of light emitting and/or photodetective diodes Grant 4,263,056 - Bensahel , et al. April 21, 1	1981-04-21
Method of fabrication of semiconductor components having optoelectronic conversion properties Grant 4,229,237 - Bensahel , et al. October 21, 1	1980-10-21

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