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name:-0.011019945144653
name:-0.093554973602295
name:-0.00078415870666504
Benoit; John J. Patent Filings

Benoit; John J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Benoit; John J..The latest application filed is for "bipolar junction transistors with self-aligned terminals".

Company Profile
0.9.7
  • Benoit; John J. - Williston VT
  • Benoit; John J. - Essex Junction VT
  • Benoit; John J. - Palm Desert CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
In-line measurement of transistor device cut-off frequency
Grant 9,297,853 - Benoit , et al. March 29, 2
2016-03-29
Bipolar junction transistors with self-aligned terminals
Grant 9,231,087 - Benoit , et al. January 5, 2
2016-01-05
Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region
Grant 9,224,843 - Benoit , et al. December 29, 2
2015-12-29
Bipolar Junction Transistors With Self-aligned Terminals
App 20150214344 - Benoit; John J. ;   et al.
2015-07-30
Formation Of A High Aspect Ratio Trench In A Semiconductor Substrate And A Bipolar Semiconductor Device Having A High Aspect Ratio Trench Isolation Region
App 20150206959 - Benoit; John J. ;   et al.
2015-07-23
Bipolar junction transistors with self-aligned terminals
Grant 9,059,196 - Benoit , et al. June 16, 2
2015-06-16
Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region
Grant 9,059,234 - Benoit , et al. June 16, 2
2015-06-16
Bipolar Junction Transistors With Self-aligned Terminals
App 20150123245 - Benoit; John J. ;   et al.
2015-05-07
Formation Of A High Aspect Ratio Trench In A Semiconductor Substrate And A Bipolar Semiconductor Device Having A High Aspect Ratio Trench Isolation Region
App 20150108549 - Benoit; John J. ;   et al.
2015-04-23
In-line Measurement Of Transistor Device Cut-off Frequency
App 20140368227 - Benoit; John J. ;   et al.
2014-12-18
Bipolar transistor structure and method including emitter-base interface impurity
Grant 8,482,101 - Benoit , et al. July 9, 2
2013-07-09
Optimized device isolation
Grant 7,868,423 - Benoit , et al. January 11, 2
2011-01-11
Bipolar Transistor Structure And Method Including Emitter-base Interface Impurity
App 20100320571 - Benoit; John J. ;   et al.
2010-12-23
Optimized Device Isolation
App 20100117122 - Benoit; John J. ;   et al.
2010-05-13
Portable personal electronic perimeter alarm
Grant 4,998,093 - Benoit March 5, 1
1991-03-05

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