Ben-Yaacov; Ilan
Patent Applications and Registrations
Patent applications and USPTO patent grants for Ben-Yaacov; Ilan.The latest application filed is for "apparatus and method for applying compression".
- Ben-Yaacov; Ilan - Goleta CA
| Patent | Date |
|---|---|
| Apparatus And Method For Applying Compression App 20220183900 - Ben-Yaacov; Ilan | 2022-06-16 |
| Enhancement mode III-N HEMTs Grant 9,941,399 - Mishra , et al. April 10, 2 | 2018-04-10 |
| Forming enhancement mode III-nitride devices Grant 9,935,190 - Wu , et al. April 3, 2 | 2018-04-03 |
| Semiconductor devices with integrated hole collectors Grant 9,634,100 - Mishra , et al. April 25, 2 | 2017-04-25 |
| Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer Grant 9,590,088 - Chowdhury , et al. March 7, 2 | 2017-03-07 |
| Enhancement Mode III-N HEMTs App 20160359030 - Mishra; Umesh ; et al. | 2016-12-08 |
| Enhancement mode III-N HEMTs Grant 9,437,708 - Mishra , et al. September 6, 2 | 2016-09-06 |
| System for monitor and control of equipment Grant 9,432,210 - Bhargava , et al. August 30, 2 | 2016-08-30 |
| Forming Enhancement Mode Iii-nitride Devices App 20160190298 - Wu; Mo ; et al. | 2016-06-30 |
| Forming enhancement mode III-nitride devices Grant 9,318,593 - Wu , et al. April 19, 2 | 2016-04-19 |
| Enhancement Mode III-N HEMTs App 20160071951 - Mishra; Umesh ; et al. | 2016-03-10 |
| Semiconductor Devices With Integrated Hole Collectors App 20160064495 - Mishra; Umesh ; et al. | 2016-03-03 |
| Forming Enhancement Mode Iii-nitride Devices App 20160020313 - Wu; Mo ; et al. | 2016-01-21 |
| Enhancement mode III-N HEMTs Grant 9,196,716 - Mishra , et al. November 24, 2 | 2015-11-24 |
| Semiconductor devices with integrated hole collectors Grant 9,184,275 - Mishra , et al. November 10, 2 | 2015-11-10 |
| Semiconductor heterostructure diodes Grant 9,041,065 - Wu , et al. May 26, 2 | 2015-05-26 |
| Current Aperture Vertical Electron Transistors With Ammonia Molecular Beam Epitaxy Grown P-type Gallium Nitride As A Current Blocking Layer App 20150137137 - Chowdhury; Srabanti ; et al. | 2015-05-21 |
| Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer Grant 8,937,338 - Chowdhury , et al. January 20, 2 | 2015-01-20 |
| Enhancement Mode III-N HEMTs App 20140361309 - Mishra; Umesh ; et al. | 2014-12-11 |
| Enhancement mode III-N HEMTs Grant 8,841,702 - Mishra , et al. September 23, 2 | 2014-09-23 |
| System For Monitor And Control Of Equipment App 20140070959 - Bhargava; Siddhant ; et al. | 2014-03-13 |
| Semiconductor Heterostructure Diodes App 20140054603 - Wu; Yifeng ; et al. | 2014-02-27 |
| Semiconductor Devices With Integrated Hole Collectors App 20140001557 - Mishra; Umesh ; et al. | 2014-01-02 |
| Enhancement Mode III-N HEMTs App 20130316502 - Mishra; Umesh ; et al. | 2013-11-28 |
| Semiconductor heterostructure diodes Grant 8,541,818 - Wu , et al. September 24, 2 | 2013-09-24 |
| Enhancement mode III-N HEMTs Grant 8,519,438 - Mishra , et al. August 27, 2 | 2013-08-27 |
| Current Aperture Vertical Electron Transistors With Ammonia Molecular Beam Epitaxy Grown P-type Gallium Nitride As A Current Blocking Layer App 20120319127 - Chowdhury; Srabanti ; et al. | 2012-12-20 |
| Semiconductor Heterostructure Diodes App 20120267640 - Wu; Yifeng ; et al. | 2012-10-25 |
| Semiconductor heterostructure diodes Grant 8,237,198 - Wu , et al. August 7, 2 | 2012-08-07 |
| Semiconductor Heterostructure Diodes App 20110127541 - Wu; Yifeng ; et al. | 2011-06-02 |
| III-Nitride devices with recessed gates Grant 7,939,391 - Suh , et al. May 10, 2 | 2011-05-10 |
| Semiconductor heterostructure diodes Grant 7,898,004 - Wu , et al. March 1, 2 | 2011-03-01 |
| III-nitride bidirectional switches Grant 7,875,907 - Honea , et al. January 25, 2 | 2011-01-25 |
| Insulated gate e-mode transistors Grant 7,851,825 - Suh , et al. December 14, 2 | 2010-12-14 |
| Iii-nitride Devices With Recessed Gates App 20100255646 - Suh; Chang Soo ; et al. | 2010-10-07 |
| III-nitride devices with recessed gates Grant 7,795,642 - Suh , et al. September 14, 2 | 2010-09-14 |
| Semiconductor Heterostructure Diodes App 20100140660 - Wu; Yifeng ; et al. | 2010-06-10 |
| Enhancement Mode III-N HEMTs App 20090267078 - Mishra; Umesh ; et al. | 2009-10-29 |
| Insulated Gate E-mode Transistors App 20090146185 - Suh; Chang Soo ; et al. | 2009-06-11 |
| III-Nitride Devices with Recessed Gates App 20090072240 - Suh; Chang Soo ; et al. | 2009-03-19 |
| Iii-nitride Bidirectional Switches App 20090065810 - Honea; James ; et al. | 2009-03-12 |
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