Patent | Date |
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Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) Grant 11,282,962 - Zhou , et al. March 22, 2 | 2022-03-22 |
Self-aligned gate cap including an etch-stop layer Grant 11,257,716 - Belyansky , et al. February 22, 2 | 2022-02-22 |
Self-aligned gate cap including an etch-stop layer Grant 11,222,820 - Belyansky , et al. January 11, 2 | 2022-01-11 |
Vertical fin field effect transistor devices with a replacement metal gate Grant 11,107,814 - Bao , et al. August 31, 2 | 2021-08-31 |
Vertical fin field effect transistor devices with a replacement metal gate Grant 11,049,858 - Bao , et al. June 29, 2 | 2021-06-29 |
Vertical transport field-effect transistor (VFET) with dual top spacer Grant 11,011,624 - Mochizuki , et al. May 18, 2 | 2021-05-18 |
Vertical fin field effect transistor devices with a replacement metal gate Grant 11,004,850 - Bao , et al. May 11, 2 | 2021-05-11 |
Uniform Horizontal Spacer App 20210119016 - Belyansky; Michael P. ;   et al. | 2021-04-22 |
Uniform horizontal spacer Grant 10,957,781 - Belyansky , et al. March 23, 2 | 2021-03-23 |
Transistor having straight bottom spacers Grant 10,943,992 - Cheng , et al. March 9, 2 | 2021-03-09 |
Transistor Having Straight Bottom Spacers App 20200357894 - Cheng; Kangguo ;   et al. | 2020-11-12 |
Stress modulation of nFET and pFET fin structures Grant 10,832,973 - Zhou , et al. November 10, 2 | 2020-11-10 |
Threshold Voltage Adjustment From Oxygen Vacancy By Scavenge Metal Filling At Gate Cut (ct) App 20200287048 - Zhou; Huimei ;   et al. | 2020-09-10 |
Stress Modulation Of Nfet And Pfet Fin Structures App 20200266111 - Zhou; Huimei ;   et al. | 2020-08-20 |
Controlling gate profile by inter-layer dielectric (ILD) nanolaminates Grant 10,741,673 - Belyansky , et al. A | 2020-08-11 |
Encapsulation layer for vertical transport field-effect transistor gate stack Grant 10,741,663 - Bao , et al. A | 2020-08-11 |
Highly selective dry etch process for vertical FET STI recess Grant 10,734,245 - Bi , et al. | 2020-08-04 |
Vertical Fin Field Effect Transistor Devices With A Replacement Metal Gate App 20200243526 - Bao; Ruqiang ;   et al. | 2020-07-30 |
Vertical Fin Field Effect Transistor Devices With A Replacement Metal Gate App 20200243527 - Bao; Ruqiang ;   et al. | 2020-07-30 |
Vertical Fin Field Effect Transistor Devices With A Replacement Metal Gate App 20200243525 - Bao; Ruqiang ;   et al. | 2020-07-30 |
Vertical fin field effect transistor devices with a replacement metal gate Grant 10,679,993 - Bao , et al. | 2020-06-09 |
Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) Grant 10,672,910 - Zhou , et al. | 2020-06-02 |
Stress modulation of nFET and pFET fin structures Grant 10,665,512 - Zhou , et al. | 2020-05-26 |
Vertical Fin Field Effect Transistor Devices With A Replacement Metal Gate App 20200144265 - Bao; Ruqiang ;   et al. | 2020-05-07 |
Stress Modulation Of Nfet And Pfet Fin Structures App 20200126867 - Zhou; Huimei ;   et al. | 2020-04-23 |
Highly Selective Dry Etch Process for Vertical FET STI Recess App 20200126805 - Bi; Zhenxing ;   et al. | 2020-04-23 |
Self-aligned Gate Cap Including An Etch-stop Layer App 20200090998 - Belyansky; Michael P. ;   et al. | 2020-03-19 |
Protection of low temperature isolation fill Grant 10,586,700 - Belyansky , et al. | 2020-03-10 |
Threshold Voltage Adjustment From Oxygen Vacancy By Scavenge Metal Filling At Gate Cut (ct) App 20200052125 - Zhou; Huimei ;   et al. | 2020-02-13 |
Preventing Delamination At Silicon/dielectic Interface App 20200051812 - Belyansky; Michael P. ;   et al. | 2020-02-13 |
Uniform Horizontal Spacer App 20200044054 - Belyansky; Michael P. ;   et al. | 2020-02-06 |
Protection of low temperature isolation fill Grant 10,535,550 - Belyansky , et al. Ja | 2020-01-14 |
Self-aligned Gate Cap Including An Etch-stop Layer App 20200006137 - Belyansky; Michael P. ;   et al. | 2020-01-02 |
Vertical Transport FET (VFET) with Dual Top Spacer App 20190334017 - Mochizuki; Shogo ;   et al. | 2019-10-31 |
Vertical transport FET (VFET) with dual top spacer Grant 10,388,766 - Mochizuki , et al. A | 2019-08-20 |
Controlling Gate Profile By Inter-layer Dielectric (ild) Nanolaminates App 20190207013 - Belyansky; Michael P. ;   et al. | 2019-07-04 |
Vertical Transport FET (VFET) with Dual Top Spacer App 20190123174 - Mochizuki; Shogo ;   et al. | 2019-04-25 |
Controlling gate profile by inter-layer dielectric (ILD) nanolaminates Grant 10,249,730 - Belyansky , et al. | 2019-04-02 |
Protection Of Low Temperature Isolation Fill App 20190067079 - Belyansky; Michael P. ;   et al. | 2019-02-28 |
Protection Of Low Temperature Isolation Fill App 20190067078 - Belyansky; Michael P. ;   et al. | 2019-02-28 |
Uniform bottom spacer for vertical field effect transistor Grant 10,170,582 - Belyansky , et al. J | 2019-01-01 |
Resist having tuned interface hardmask layer for EUV exposure Grant 10,141,188 - Belyansky , et al. Nov | 2018-11-27 |
Resist having tuned interface hardmask layer for EUV exposure Grant 10,134,592 - Belyansky , et al. November 20, 2 | 2018-11-20 |
Resist Having Tuned Interface Hardmask Layer For EUV Exposure App 20180166277 - Belyansky; Michael P. ;   et al. | 2018-06-14 |
Resist Having Tuned Interface Hardmask Layer For EUV Exposure App 20180166278 - Belyansky; Michael P. ;   et al. | 2018-06-14 |
Resist having tuned interface hardmask layer for EUV exposure Grant 9,929,012 - Belyansky , et al. March 27, 2 | 2018-03-27 |
Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxide Grant 9,613,956 - Belyansky , et al. April 4, 2 | 2017-04-04 |
Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxide Grant 9,397,002 - Belyansky , et al. July 19, 2 | 2016-07-19 |
Dieletric Cap Having Material With Optical Band Gap To Substantially Block Uv Radiation During Curing Treatment, And Related Methods App 20140302685 - Belyansky; Michael P. ;   et al. | 2014-10-09 |
Methods Of Manufacturing Integrated Circuits Having A Compressive Nitride Layer App 20140183720 - Beasor; Scott ;   et al. | 2014-07-03 |
Method for controlling structure height Grant 8,557,649 - Venigalla , et al. October 15, 2 | 2013-10-15 |
Method For Controlling Structure Height App 20130102125 - Venigalla; Rajasekhar ;   et al. | 2013-04-25 |
Method of patterned image reversal Grant 8,420,542 - Sardesai , et al. April 16, 2 | 2013-04-16 |
Method Of Patterned Image Reversal App 20120302069 - Sardesai; Viraj Yashawant ;   et al. | 2012-11-29 |
Dual oxide stress liner Grant 7,863,646 - Belyansky , et al. January 4, 2 | 2011-01-04 |
Structure and method to improve channel mobility by gate electrode stress modification Grant 7,750,410 - Belyansky , et al. July 6, 2 | 2010-07-06 |
Oxidation method for altering a film structure Grant 7,741,166 - Belyansky , et al. June 22, 2 | 2010-06-22 |
Method of forming gate stack and structure thereof Grant 7,691,701 - Belyansky , et al. April 6, 2 | 2010-04-06 |
Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabrication same Grant 7,659,160 - Belyansky , et al. February 9, 2 | 2010-02-09 |
Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabricating same Grant 7,648,871 - Belyansky , et al. January 19, 2 | 2010-01-19 |
Field effect transistors with dielectric source drain halo regions and reduced miller capacitance Grant 7,618,853 - Belyansky , et al. November 17, 2 | 2009-11-17 |
Method of producing highly strained PECVD silicon nitride thin films at low temperature Grant 7,585,704 - Belyansky , et al. September 8, 2 | 2009-09-08 |
Mobility enhanced CMOS devices Grant 7,569,848 - Belyansky , et al. August 4, 2 | 2009-08-04 |
Integration Of Ion Gettering Material In Dielectric App 20090176350 - BELYANSKY; MICHAEL P. ;   et al. | 2009-07-09 |
Ultraviolet Uv Photo Processing Or Curing Of Thin Films With Surface Treatment App 20090155487 - BELYANSKY; MICHAEL P. ;   et al. | 2009-06-18 |
Dual Oxide Stress Liner App 20090152638 - BELYANSKY; MICHAEL P. ;   et al. | 2009-06-18 |
Stressed semiconductor device structures having granular semiconductor material Grant 7,488,658 - Doris , et al. February 10, 2 | 2009-02-10 |
Dielectric Cap Having Material With Optical Band Gap To Substantially Block Uv Radiation During Curing Treatment, And Related Methods App 20080173985 - Belyansky; Michael P. ;   et al. | 2008-07-24 |
Integrated Circuit System Having Strained Transistor App 20080142897 - Teh; Young Way ;   et al. | 2008-06-19 |
Stressed Semiconductor Device Structures Having Granular Semiconductor Material App 20080064172 - Doris; Bruce B. ;   et al. | 2008-03-13 |
Field effect transistors with dielectric source drain halo regions and reduced miller capacitance Grant 7,342,266 - Belyansky , et al. March 11, 2 | 2008-03-11 |
Integrated Circuit System Having Strained Transistor App 20080044967 - Teh; Young Way ;   et al. | 2008-02-21 |
Field Effect Transistors (fets) With Inverted Source/drain Metallic Contacts, And Method Of Fabricating Same App 20080042174 - Belyansky; Michael P. ;   et al. | 2008-02-21 |
Field Effect Transistors With Dielectric Source Drain Halo Regions And Reduced Miller Capacitance App 20080020522 - Belyansky; Michael P. ;   et al. | 2008-01-24 |
Improved Thermal Budget Using Nickel Based Silicides For Enhanced Semiconductor Device Performance App 20070249149 - Deshpande; Sadanand V. ;   et al. | 2007-10-25 |
Method of forming self-aligned low-k gate cap Grant 7,271,049 - Gluschenkov , et al. September 18, 2 | 2007-09-18 |
Field Effect Transistors With Dielectric Source Drain Halo Regions And Reduced Miller Capacitance App 20070161169 - Belyansky; Michael P. ;   et al. | 2007-07-12 |
Self-aligned low-k gate cap Grant 7,230,296 - Gluschenkov , et al. June 12, 2 | 2007-06-12 |
Field Effect Transistors (fets) With Inverted Source/drain Metallic Contacts, And Method Of Fabricating Same App 20070092990 - Belyansky; Michael P. ;   et al. | 2007-04-26 |
Method of fabricating mobility enhanced CMOS devices Grant 7,205,206 - Belyansky , et al. April 17, 2 | 2007-04-17 |
CMOS transistor structure including film having reduced stress by exposure to atomic oxygen Grant 7,202,516 - Belyansky , et al. April 10, 2 | 2007-04-10 |
Multiple Low And High K Gate Oxides On Single Gate For Lower Miller Capacitance And Improved Drive Current App 20070063277 - Belyansky; Michael P. ;   et al. | 2007-03-22 |
Fabrication Of Strained Semiconductor-on-insulator (ssoi) Structures By Using Strained Insulating Layers App 20070010070 - Belyansky; Michael P. ;   et al. | 2007-01-11 |
Self-aligned low-k gate cap App 20060289909 - Gluschenkov; Oleg ;   et al. | 2006-12-28 |
Stressed semiconductor device structures having granular semiconductor material Grant 7,122,849 - Doris , et al. October 17, 2 | 2006-10-17 |
Method Of Producing Highly Strained Pecvd Silicon Nitride Thin Films At Low Temperature App 20060223290 - Belyansky; Michael P. ;   et al. | 2006-10-05 |
Reduced dielectric constant spacer materials integration for high speed logic gates Grant 7,081,393 - Belyansky , et al. July 25, 2 | 2006-07-25 |
Mobility enhanced CMOS devices App 20060148147 - Belyansky; Michael P. ;   et al. | 2006-07-06 |
CMOS transistor structure including film having reduced stress by exposure to atomic oxygen App 20060131659 - Belyansky; Michael P. ;   et al. | 2006-06-22 |
Oxidation method for altering a film structure App 20060105516 - Belyansky; Michael P. ;   et al. | 2006-05-18 |
SELF-ALIGNED LOW-k GATE CAP App 20060099783 - Gluschenkov; Oleg ;   et al. | 2006-05-11 |
Oxidation method for altering a film structure and CMOS transistor structure formed therewith Grant 6,982,196 - Belyansky , et al. January 3, 2 | 2006-01-03 |
Structure and method to improve channel mobility by gate electrode stress modification App 20050282325 - Belyansky, Michael P. ;   et al. | 2005-12-22 |
Structure and method to improve channel mobility by gate electrode stress modification Grant 6,977,194 - Belyansky , et al. December 20, 2 | 2005-12-20 |
Reduced Dielectric Constant Spacer Materials Integration For High Speed Logic Gates App 20050260819 - Belyansky, Michael P. ;   et al. | 2005-11-24 |
Forming collar structures in deep trench capacitors with thermally stable filler material Grant 6,967,137 - Belyansky , et al. November 22, 2 | 2005-11-22 |
Structure and method to improve channel mobility by gate electrode stress modification App 20050245017 - Belyansky, Michael P. ;   et al. | 2005-11-03 |
Mobility Enhanced Cmos Devices App 20050194699 - Belyansky, Michael P. ;   et al. | 2005-09-08 |
Filling high aspect ratio isolation structures with polysilazane based material App 20050179112 - Belyansky, Michael P. ;   et al. | 2005-08-18 |
HDP process for high aspect ratio gap filling Grant 6,914,015 - Belyansky , et al. July 5, 2 | 2005-07-05 |
Stressed Semiconductor Device Structures Having Granular Semiconductor Material App 20050106799 - Doris, Bruce B. ;   et al. | 2005-05-19 |
Oxidation Method For Altering A Film Structure And Cmos Transistor Structure Formed Therewith App 20050093081 - Belyansky, Michael P. ;   et al. | 2005-05-05 |
Structure and method to improve channel mobility by gate electrode stress modification App 20050093059 - Belyansky, Michael P. ;   et al. | 2005-05-05 |
Hdp Process For High Aspect Ratio Gap Filling App 20050095872 - Belyansky, Michael P. ;   et al. | 2005-05-05 |
Filling high aspect ratio isolation structures with polysilazane based material Grant 6,869,860 - Belyansky , et al. March 22, 2 | 2005-03-22 |
Forming Collar Structures In Deep Trench Capacitors With Thermally Stable Filler Material App 20050009267 - Belyansky, Michael P. ;   et al. | 2005-01-13 |
Filling High Aspect Ratio Isolation Structures With Polysilazane Based Material App 20040248374 - Belyansky, Michael P. ;   et al. | 2004-12-09 |
Method of making thermally stable planarizing films Grant 6,642,147 - Dokumaci , et al. November 4, 2 | 2003-11-04 |
Method of protecting semiconductor areas while exposing a gate Grant 6,562,713 - Belyansky , et al. May 13, 2 | 2003-05-13 |
Method of making thermally stable planarizing films App 20030038109 - Dokumaci, Omer H. ;   et al. | 2003-02-27 |