loadpatents
name:-0.082690000534058
name:-0.10521078109741
name:-0.0089941024780273
Bednorz; Johannes Georg Patent Filings

Bednorz; Johannes Georg

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bednorz; Johannes Georg.The latest application filed is for "programmable non-volatile resistance switching device".

Company Profile
0.9.9
  • Bednorz; Johannes Georg - Wolfhausen CH
  • Bednorz; Johannes Georg - Adliswil CH
  • Bednorz; Johannes Georg - Wolfhusen CH
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Superconductive compounds having high transition temperature, and methods for their use and preparation
Grant 8,688,181 - Bednorz , et al. April 1, 2
2014-04-01
Superconductive compounds having high transition temperature, and methods for their use and preparation
Grant 8,060,169 - Bednorz , et al. November 15, 2
2011-11-15
Programmable-resistance memory cell
Grant 7,872,901 - Bednorz , et al. January 18, 2
2011-01-18
Programmable non-volatile resistance switching device
Grant 7,465,952 - Alvarado , et al. December 16, 2
2008-12-16
Programmable Non-Volatile Resistance Switching Device
App 20080164455 - Alvarado; Santos F. ;   et al.
2008-07-10
Programmable-Resistance Memory Cell
App 20080152932 - Bednorz; Johannes Georg ;   et al.
2008-06-26
Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
Grant 7,376,006 - Bednorz , et al. May 20, 2
2008-05-20
Non-volatile memory architecture employing bipolar programmable resistance storage elements
Grant 7,324,366 - Bednorz , et al. January 29, 2
2008-01-29
Multi-layer Device With Switchable Resistance
App 20080011996 - Bednorz; Johannes Georg ;   et al.
2008-01-17
Enhanced Programming Performance in a Nonvolatile Memory Device Having a Bipolar Programmable Storage Element
App 20070274125 - Bednorz; Johannes Georg ;   et al.
2007-11-29
Non-volatile memory architecture employing bipolar programmable resistance storage elements
App 20070247893 - Bednorz; Johannes Georg ;   et al.
2007-10-25
Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
App 20060256611 - Bednorz; Johannes Georg ;   et al.
2006-11-16
Programmable non-volatile resistance switching device
App 20060071272 - Alvarado; Santos F. ;   et al.
2006-04-06
Tailored insulator properties for devices
Grant 6,717,199 - Laibowitz , et al. April 6, 2
2004-04-06
Tailored insulator properties for devices
App 20030209745 - Laibowitz, Robert Benjamin ;   et al.
2003-11-13
Tailored insulator properties for devices
App 20020153549 - Laibowitz, Robert Benjamin ;   et al.
2002-10-24
Process for manufacturing thin films by multi-layer deposition
Grant 5,648,321 - Bednorz , et al. July 15, 1
1997-07-15

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