BEAUMONT; Bernard

Patent Applications and Registrations

Patent applications and USPTO patent grants for BEAUMONT; Bernard.The latest application filed is for "method for fabricating a semiconductor substrate".

Company Profile

3.31.29

BEAUMONT; Bernard - Le Tignet FR
Beaumont; Bernard - Valbonne FR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method For Fabricating A Semiconductor Substrate App 20200381249 - BEAUMONT; Bernard ; et al.	2020-12-03
Method for the production of wafers of nitride of element 13, having a non-zero truncation angle Grant 10,604,864 - Beaumont , et al.	2020-03-31
Semiconductor material including different crystalline orientation zones and related production process Grant 10,497,833 - Faurie , et al. De	2019-12-03
Method for manufacturing a wafer of semiconducting material based on a group 13 element nitride Grant 10,181,399 - Beaumont , et al. Ja	2019-01-15
Method of forming semiconductor substrate Grant 10,043,662 - Faurie , et al. August 7, 2	2018-08-07
Semiconductor Material Including Different Crystalline Orientation Zones And Related Production Process App 20180219129 - FAURIE; Jean-Pierre ; et al.	2018-08-02
Method For The Production Of Wafers Of Nitride Of Element 13, Having A Non-zero Truncation Angle App 20180155852 - Beaumont; Bernard ; et al.	2018-06-07
Semiconductor material including different crystalline orientation zones and related production process Grant 9,882,087 - Faurie , et al. January 30, 2	2018-01-30
Chemical Vapour Deposition Reactor App 20170342594 - Beaumont; Bernard ; et al.	2017-11-30
Method For Manufacturing A Wafer Of Semiconducting Material Based On A Group 13 Element Nitride App 20170213719 - Beaumont; Bernard ; et al.	2017-07-27
Semiconductor Material Including Different Crystalline Orientation Zones And Related Production Process App 20160149083 - FAURIE; Jean-Pierre ; et al.	2016-05-26
Method of forming a freestanding semiconductor wafer Grant 9,318,314 - Faurie , et al. April 19, 2	2016-04-19
Group III-V substrate material with particular crystallographic features and methods of making Grant 9,312,129 - Faurie , et al. April 12, 2	2016-04-12
Semiconductor substrate and method of manufacturing Grant 9,209,018 - Beaumont , et al. December 8, 2	2015-12-08
Group III-V substrate material with thin buffer layer and methods of making Grant 9,130,120 - Faurie , et al. September 8, 2	2015-09-08
Semiconductor substrate and method of forming Grant 9,064,685 - Faurie , et al. June 23, 2	2015-06-23
Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof Grant 9,012,306 - Beaumont , et al. April 21, 2	2015-04-21
Semiconductor Substrate And Method Of Forming App 20150076512 - Faurie; Jean-Pierre ; et al.	2015-03-19
Semiconductor substrate and method of forming Grant 8,921,210 - Faurie , et al. December 30, 2	2014-12-30
Group III-V substrate material with particular crystallographic features Grant 8,916,456 - Faurie , et al. December 23, 2	2014-12-23
Group Iii-v Substrate Material With Thin Buffer Layer And Methods Of Making App 20140185639 - Faurie; Jean-Pierre ; et al.	2014-07-03
Group III-V Substrate Material With Particular Crystallographic Features And Methods Of Making App 20140065801 - Faurie; Jean-Pierre ; et al.	2014-03-06
Method Of Forming A Freestanding Semiconductor Wafer App 20130288455 - Faurie; Jean-Pierre ; et al.	2013-10-31
Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate Grant 8,557,042 - Aujol , et al. October 15, 2	2013-10-15
Semiconductor Substrate And Method Of Forming App 20130143394 - Faurie; Jean-Pierre ; et al.	2013-06-06
System For Use In The Formation Of Semiconductor Crystalline Materials App 20130118408 - Faurie; Jean-Pierre ; et al.	2013-05-16
Group Iii-v Substrate Material With Particular Crystallographic Features App 20130082279 - Faurie; Jean-Pierre ; et al.	2013-04-04
Semiconductor Substrate And Method Of Manufacturing App 20130001586 - Beaumont; Bernard ; et al.	2013-01-03
Semiconductor Substrate And Method Of Forming App 20130001748 - Faurie; Jean-Pierre ; et al.	2013-01-03
Process for growth of low dislocation density GaN Grant 8,283,239 - Beaumont , et al. October 9, 2	2012-10-09
Manufacturing Of Low Defect Density Free-standing Gallium Nitride Substrates And Devices Fabricated Thereof App 20110316000 - Beaumont; Bernard ; et al.	2011-12-29
Process for producing an epitaxial layer of galium nitride Grant 8,030,101 - Frayssinet , et al. October 4, 2	2011-10-04
Method For Manufacturing A Single Crystal Of Nitride By Epitaxial Growth On A Substrate Preventing Growth On The Edges Of The Substrate App 20100074826 - Aujol; Eric ; et al.	2010-03-25
Process For Producing An Epitaxial Layer Of Galium Nitride App 20100001289 - Frayssinet; Eric ; et al.	2010-01-07
Process for Growth of Low Dislocation Density Gan App 20090278136 - Beaumont; Bernard ; et al.	2009-11-12
Process for producing an epitalixal layer of galium nitride Grant 7,560,296 - Frayssinet , et al. July 14, 2	2009-07-14
Method for epitaxial growth of a gallium nitride film separated from its substrate Grant 7,488,385 - Lahreche , et al. February 10, 2	2009-02-10
Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density Grant 7,455,729 - Beaumont , et al. November 25, 2	2008-11-25
Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof Grant 7,445,673 - Beaumont , et al. November 4, 2	2008-11-04
Process for producing an epitalixal layer of galium nitride App 20070072320 - Frayssinet; Eric ; et al.	2007-03-29
Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof App 20060266281 - Beaumont; Bernard ; et al.	2006-11-30
Process for producing an epitaxial layer of gallium nitride Grant 7,118,929 - Frayssinet , et al. October 10, 2	2006-10-10
Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density App 20060099781 - Beaumont; Bernard ; et al.	2006-05-11
Method for epitaxial growth of a gallium nitride film separated from its substrate App 20050217565 - Lahreche, Hacene ; et al.	2005-10-06
Process for producing an epitaxial layer of gallium nitride Grant 6,802,902 - Beaumont , et al. October 12, 2	2004-10-12
Process for producing an epitaxial layer of gallium nitride App 20040137732 - Frayssinet, Eric ; et al.	2004-07-15
Process for producing an epitaxial layer of gallium nitride App 20020152952 - Beaumont, Bernard ; et al.	2002-10-24
Method for producing a gallium nitride epitaxial layer Grant 6,325,850 - Beaumont , et al. December 4, 2	2001-12-04

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