Beam, III; Edward A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Beam, III; Edward A..The latest application filed is for "field-effect transistor".

Company Profile

6.23.15

Beam, III; Edward A. - Plano TX
- Plano TX US
Beam, III; Edward A. - Dallas TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
High electron mobility transistor (HEMT) device Grant 10,734,512 - Beam, III , et al.	2020-08-04
High electron mobility transistor (HEMT) device Grant 10,636,881 - Beam, III , et al.	2020-04-28
High electron mobility transistor (HEMT) device Grant 10593764 -	2020-03-17
Field-effect transistor Grant 10,559,665 - Xie , et al. Feb	2020-02-11
Field-effect Transistor App 20190267452 - Xie; Jinqiao ; et al.	2019-08-29
High Electron Mobility Transistor (hemt) Device App 20190237570 - Beam, III; Edward A. ; et al.	2019-08-01
Field-effect transistor Grant 10,290,713 - Xie , et al.	2019-05-14
Field-effect Transistor App 20190035895 - Xie; Jinqiao ; et al.	2019-01-31
Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces Grant 10,177,247 - Xie , et al. J	2019-01-08
Semiconductor device with high thermal conductivity substrate and process for making the same Grant 10,090,172 - Gu , et al. October 2, 2	2018-10-02
Semiconductor device with high thermal conductivity substrate and process for making the same Grant 10,037,899 - Gu , et al. July 31, 2	2018-07-31
CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO INTERNAL REGROWTH INTERFACES App 20180212045 - Xie; Jinqiao ; et al.	2018-07-26
Double heterojunction field effect transistor with polarization compensated layer Grant 9,972,708 - Xie , et al. May 15, 2	2018-05-15
High electron mobility transistor (HEMT) device and method of making the same Grant 9,865,721 - Beam, III , et al. January 9, 2	2018-01-09
High Electron Mobility Transistor (hemt) Device And Method Of Making The Same App 20170365700 - Beam, III; Edward A. ; et al.	2017-12-21
High Electron Mobility Transistor (hemt) Device App 20170294529 - Beam, III; Edward A. ; et al.	2017-10-12
Double Heterojunction Field Effect Transistor With Polarization Compensated Layer App 20170278958 - Xie; Jinqiao ; et al.	2017-09-28
Semiconductor Device With High Thermal Conductivity Substrate And Process For Making The Same App 20170133295 - Gu; Xing ; et al.	2017-05-11
Semiconductor Device With High Thermal Conductivity Substrate And Process For Making The Same App 20170133239 - Gu; Xing ; et al.	2017-05-11
Doped gallium nitride high-electron mobility transistor Grant 9,640,650 - Beam, III , et al. May 2, 2	2017-05-02
Gallium nitride on high thermal conductivity material device and method Grant 9,337,278 - Gu , et al. May 10, 2	2016-05-10
Digital alloy layer in a III-nitrade based heterojunction field effect transistor Grant 9,202,905 - Xie , et al. December 1, 2	2015-12-01
Doped Gallium Nitride High-electron Mobility Transistor App 20150200287 - Beam, III; Edward A. ; et al.	2015-07-16
Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound Grant 9,029,914 - Beam, III , et al. May 12, 2	2015-05-12
Group III-nitride transistor using a regrown structure Grant 8,975,664 - Saunier , et al. March 10, 2	2015-03-10
Regrown Schottky structures for GAN HEMT devices Grant 8,778,747 - Beam, III July 15, 2	2014-07-15
Group Iii-nitride-based Transistor With Gate Dielectric Including A Fluoride - Or Chloride- Based Compound App 20140145243 - Beam, III; Edward A. ; et al.	2014-05-29
Group Iii-nitride Transistor Using A Regrown Structure App 20140001478 - Saunier; Paul ; et al.	2014-01-02
Device Structure Including High-thermal-conductivity Substrate App 20130119404 - Saunier, III; Paul ; et al.	2013-05-16
Regrown Shottky Structures For Gan Hemt Devices App 20120302178 - Beam, III; Edward A.	2012-11-29
Increased responsivity photodetector Grant 7,148,463 - Mahajan , et al. December 12, 2	2006-12-12
Heterostructure field effect transistor Grant 6,787,826 - Tserng , et al. September 7, 2	2004-09-07
Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers Grant 6,697,412 - Beam, III , et al. February 24, 2	2004-02-24
Method of forming a piezoelectric layer with improved texture Grant 5,935,641 - Beam, III , et al. August 10, 1	1999-08-10
Integrated field effect transistor and resonant tunneling diode Grant 5,534,714 - Beam, III , et al. July 9, 1	1996-07-09
Method for patterned heteroepitaxial growth Grant 5,084,409 - Beam, III , et al. January 28, 1	1992-01-28

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.