Patent | Date |
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Silicon carbide superjunction power semiconductor device and method for manufacturing the same Grant 11,031,473 - Bauer , et al. June 8, 2 | 2021-06-08 |
Area efficient floating field ring termination Grant 10,629,677 - Bauer , et al. | 2020-04-21 |
Power semiconductor device with floating field ring termination Grant 10,566,463 - Bauer , et al. Feb | 2020-02-18 |
Silicon Carbide Superjunction Power Semiconductor Device And Method For Manufacturing The Same App 20200006496 - Bauer; Friedhelm ;   et al. | 2020-01-02 |
Power Semiconductor Device With Floating Field Ring Termination App 20190288124 - Bauer; Friedhelm ;   et al. | 2019-09-19 |
Area Efficient Floating Field Ring Termination App 20190035884 - Bauer; Friedhelm ;   et al. | 2019-01-31 |
Junction barrier Schottky rectifier Grant 9,659,927 - Bauer , et al. May 23, 2 | 2017-05-23 |
Power Semiconductor Device App 20160204240 - Bauer; Friedhelm | 2016-07-14 |
Junction Barrier Schottky Rectifier App 20160190126 - Bauer; Friedhelm ;   et al. | 2016-06-30 |
Power semiconductor device and method for manufacturing such a power semiconductor device Grant 8,829,563 - Rahimo , et al. September 9, 2 | 2014-09-09 |
Power Semiconductor Device And Method For Manufacturing Such A Power Semiconductor Device App 20130334566 - RAHIMO; Munaf ;   et al. | 2013-12-19 |
Power semiconductor device Grant 8,304,814 - Bauer November 6, 2 | 2012-11-06 |
Power Semiconductor Device App 20120001199 - BAUER; Friedhelm | 2012-01-05 |
Turn-off, MOS-controlled, power semiconductor component Grant 5,698,867 - Bauer , et al. December 16, 1 | 1997-12-16 |
Power semiconductor component with transparent emitter and stop layer Grant 5,668,385 - Bauer , et al. September 16, 1 | 1997-09-16 |
IGBT with self-aligning cathode pattern and method for producing it Grant 5,414,290 - Bauer May 9, 1 | 1995-05-09 |
Turn-off power semiconductor device Grant 5,349,213 - Bauer September 20, 1 | 1994-09-20 |
Power semiconductor device with switch-off facility Grant 5,144,400 - Bauer September 1, 1 | 1992-09-01 |
Gate turn-off power semiconductor component Grant 5,105,244 - Bauer April 14, 1 | 1992-04-14 |
Bidirectional semiconductor component that can be turned off Grant 5,040,042 - Bauer , et al. August 13, 1 | 1991-08-13 |
MOS-controlled bipolar power semiconductor component Grant 4,985,741 - Bauer , et al. January 15, 1 | 1991-01-15 |
Field effect controlled, bipolar power semiconductor component with silicide layer Grant 4,975,782 - Bauer December 4, 1 | 1990-12-04 |
Controllable power semiconductor component Grant 4,967,255 - Bauer , et al. October 30, 1 | 1990-10-30 |
MOS-controlled thyristor (MCT) Grant 4,954,869 - Bauer September 4, 1 | 1990-09-04 |