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name:-0.039222002029419
name:-0.027265071868896
name:-0.0015120506286621
Barthelmess; Reiner Patent Filings

Barthelmess; Reiner

Patent Applications and Registrations

Patent applications and USPTO patent grants for Barthelmess; Reiner.The latest application filed is for "power semiconductor component for voltage limiting, arrangement having two power semiconductor components, and a method for voltage limiting".

Company Profile
1.25.27
  • Barthelmess; Reiner - Soest DE
  • Barthelmess; Reiner - Eltmann DE
  • Barthelmess; Reiner - Warstein-Belecke DE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Power Semiconductor Component for Voltage Limiting, Arrangement Having Two Power Semiconductor Components, and a Method for Voltage Limiting
App 20220262960 - Schiele; Juergen ;   et al.
2022-08-18
Short-circuit Semiconductor Component And Method For Operating Same
App 20210367067 - KELLNER-WERDEHAUSEN; Uwe ;   et al.
2021-11-25
Short-circuit Semiconductor Component And Method For Operating It
App 20210036136 - SCHENK; Mario ;   et al.
2021-02-04
Disc-shaped thyristor for a plurality of plated-through semiconductor components
Grant 10,008,486 - Schenk , et al. June 26, 2
2018-06-26
Semiconductor component including a short-circuit structure
Grant 9,876,004 - Schulze , et al. January 23, 2
2018-01-23
Improved Disc-shaped Thyristor For A Plurality Of Plated-through Semiconductor Components
App 20170033091 - SCHENK; MARIO ;   et al.
2017-02-02
Semiconductor Component Including A Short-circuit Structure
App 20160155735 - Schulze; Hans-Joachim ;   et al.
2016-06-02
Semiconductor component including a short-circuit structure
Grant 9,269,769 - Schulze , et al. February 23, 2
2016-02-23
Semiconductor component with optimized edge termination
Grant 8,946,867 - Barthelmess , et al. February 3, 2
2015-02-03
Semiconductor Component With Optimized Edge Termination
App 20140327114 - Barthelmess; Reiner ;   et al.
2014-11-06
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
Grant 8,415,710 - Schulze , et al. April 9, 2
2013-04-09
Semiconductor component and method for producing the same
Grant 8,187,937 - Barthelmess , et al. May 29, 2
2012-05-29
Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone
Grant 8,178,411 - Barthelmess , et al. May 15, 2
2012-05-15
Method of fabricating a diode
Grant 8,034,700 - Schulze , et al. October 11, 2
2011-10-11
Arrangement including a semiconductor device and a connecting element
Grant 8,018,064 - Kellner-Werdehausen , et al. September 13, 2
2011-09-13
Bipolar Power Semiconductor Component Comprising a P-type Emitter and More Highly Doped Zones in the P-type Emitter, and Production Method
App 20110127576 - Schulze; Hans-Joachim ;   et al.
2011-06-02
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
Grant 7,884,389 - Schulze , et al. February 8, 2
2011-02-08
Diode
Grant 7,838,969 - Schulze , et al. November 23, 2
2010-11-23
High speed diode
Grant 7,812,368 - Schulze , et al. October 12, 2
2010-10-12
Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
Grant 7,749,876 - Barthelmess , et al. July 6, 2
2010-07-06
Method Of Fabricating A Diode
App 20100136774 - Schulze; Hans-Joachim ;   et al.
2010-06-03
Thyristor with recovery protection
Grant 7,687,826 - Schulze , et al. March 30, 2
2010-03-30
Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone
Grant 7,667,297 - Barthelmess , et al. February 23, 2
2010-02-23
Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone
App 20100015818 - Barthelmess; Reiner ;   et al.
2010-01-21
Semiconductor component with a channel stop zone
Grant 7,629,665 - Barthelmess , et al. December 8, 2
2009-12-08
Semiconductor Component Including A Short-circuit Structure
App 20090140290 - Schulze; Hans-Joachim ;   et al.
2009-06-04
Thyristor And Methods For Producing A Thyristor
App 20090057714 - Schulze; Hans-Joachim ;   et al.
2009-03-05
Arrangement Including A Semiconductor Device And A Connecting Element
App 20080296774 - Kellner-Werdehausen; Uwe ;   et al.
2008-12-04
Diode
App 20080173968 - Schulze; Hans-Joachim ;   et al.
2008-07-24
Method for the Production of a Buried Stop Zone in a Semiconductor Component and Semiconductor Component Comprising a Buried Stop Zone
App 20080160732 - Barthelmess; Reiner ;   et al.
2008-07-03
Semiconductor Component And Method For Producing The Same
App 20080132048 - Barthelmess; Reiner ;   et al.
2008-06-05
Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
Grant 7,361,970 - Barthelmess , et al. April 22, 2
2008-04-22
Semiconductor component and method for producing the same
Grant 7,319,250 - Barthelmess , et al. January 15, 2
2008-01-15
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
App 20070215981 - Schulze; Hans-Joachim ;   et al.
2007-09-20
Method for fabricating a semiconductor having a field zone
Grant 7,268,079 - Falck , et al. September 11, 2
2007-09-11
Thyristor with recovery protection
App 20070051972 - Schulze; Hans-Joachim ;   et al.
2007-03-08
High speed diode
App 20070029634 - Schulze; Hans-Joachim ;   et al.
2007-02-08
Diode
App 20070007587 - Barthelmess; Reiner ;   et al.
2007-01-11
Semiconductor Component with a Channel Stop Zone
App 20070007592 - Barthelmess; Reiner ;   et al.
2007-01-11
Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone
App 20060286753 - Barthelmess; Reiner ;   et al.
2006-12-21
Semiconductor component and method for producing the same
App 20060086991 - Barthelmess; Reiner ;   et al.
2006-04-27
Method for fabricating field rings
App 20060051923 - Falck; Elmar ;   et al.
2006-03-09
Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
App 20050280076 - Barthelmess, Reiner ;   et al.
2005-12-22
Thyristor component with improved blocking capabilities in the reverse direction
App 20050258448 - Barthelmess, Reiner ;   et al.
2005-11-24
High-voltage diode
Grant 6,770,917 - Barthelmess , et al. August 3, 2
2004-08-03
Power semiconductor component having a mesa edge termination
Grant 6,696,705 - Barthelmess , et al. February 24, 2
2004-02-24
Method for producing a power semiconductor device with a stop zone
Grant 6,660,569 - Barthelmess , et al. December 9, 2
2003-12-09
High-voltage diode and method for fabricating the high-voltage diode
App 20030183900 - Barthelmess, Reiner ;   et al.
2003-10-02
Power semiconductor component for high reverse voltages
App 20010005036 - Porst, Alfred ;   et al.
2001-06-28

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