Patent | Date |
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Power Semiconductor Component for Voltage Limiting, Arrangement Having Two Power Semiconductor Components, and a Method for Voltage Limiting App 20220262960 - Schiele; Juergen ;   et al. | 2022-08-18 |
Short-circuit Semiconductor Component And Method For Operating Same App 20210367067 - KELLNER-WERDEHAUSEN; Uwe ;   et al. | 2021-11-25 |
Short-circuit Semiconductor Component And Method For Operating It App 20210036136 - SCHENK; Mario ;   et al. | 2021-02-04 |
Disc-shaped thyristor for a plurality of plated-through semiconductor components Grant 10,008,486 - Schenk , et al. June 26, 2 | 2018-06-26 |
Semiconductor component including a short-circuit structure Grant 9,876,004 - Schulze , et al. January 23, 2 | 2018-01-23 |
Improved Disc-shaped Thyristor For A Plurality Of Plated-through Semiconductor Components App 20170033091 - SCHENK; MARIO ;   et al. | 2017-02-02 |
Semiconductor Component Including A Short-circuit Structure App 20160155735 - Schulze; Hans-Joachim ;   et al. | 2016-06-02 |
Semiconductor component including a short-circuit structure Grant 9,269,769 - Schulze , et al. February 23, 2 | 2016-02-23 |
Semiconductor component with optimized edge termination Grant 8,946,867 - Barthelmess , et al. February 3, 2 | 2015-02-03 |
Semiconductor Component With Optimized Edge Termination App 20140327114 - Barthelmess; Reiner ;   et al. | 2014-11-06 |
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method Grant 8,415,710 - Schulze , et al. April 9, 2 | 2013-04-09 |
Semiconductor component and method for producing the same Grant 8,187,937 - Barthelmess , et al. May 29, 2 | 2012-05-29 |
Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone Grant 8,178,411 - Barthelmess , et al. May 15, 2 | 2012-05-15 |
Method of fabricating a diode Grant 8,034,700 - Schulze , et al. October 11, 2 | 2011-10-11 |
Arrangement including a semiconductor device and a connecting element Grant 8,018,064 - Kellner-Werdehausen , et al. September 13, 2 | 2011-09-13 |
Bipolar Power Semiconductor Component Comprising a P-type Emitter and More Highly Doped Zones in the P-type Emitter, and Production Method App 20110127576 - Schulze; Hans-Joachim ;   et al. | 2011-06-02 |
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method Grant 7,884,389 - Schulze , et al. February 8, 2 | 2011-02-08 |
Diode Grant 7,838,969 - Schulze , et al. November 23, 2 | 2010-11-23 |
High speed diode Grant 7,812,368 - Schulze , et al. October 12, 2 | 2010-10-12 |
Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone Grant 7,749,876 - Barthelmess , et al. July 6, 2 | 2010-07-06 |
Method Of Fabricating A Diode App 20100136774 - Schulze; Hans-Joachim ;   et al. | 2010-06-03 |
Thyristor with recovery protection Grant 7,687,826 - Schulze , et al. March 30, 2 | 2010-03-30 |
Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone Grant 7,667,297 - Barthelmess , et al. February 23, 2 | 2010-02-23 |
Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone App 20100015818 - Barthelmess; Reiner ;   et al. | 2010-01-21 |
Semiconductor component with a channel stop zone Grant 7,629,665 - Barthelmess , et al. December 8, 2 | 2009-12-08 |
Semiconductor Component Including A Short-circuit Structure App 20090140290 - Schulze; Hans-Joachim ;   et al. | 2009-06-04 |
Thyristor And Methods For Producing A Thyristor App 20090057714 - Schulze; Hans-Joachim ;   et al. | 2009-03-05 |
Arrangement Including A Semiconductor Device And A Connecting Element App 20080296774 - Kellner-Werdehausen; Uwe ;   et al. | 2008-12-04 |
Diode App 20080173968 - Schulze; Hans-Joachim ;   et al. | 2008-07-24 |
Method for the Production of a Buried Stop Zone in a Semiconductor Component and Semiconductor Component Comprising a Buried Stop Zone App 20080160732 - Barthelmess; Reiner ;   et al. | 2008-07-03 |
Semiconductor Component And Method For Producing The Same App 20080132048 - Barthelmess; Reiner ;   et al. | 2008-06-05 |
Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone Grant 7,361,970 - Barthelmess , et al. April 22, 2 | 2008-04-22 |
Semiconductor component and method for producing the same Grant 7,319,250 - Barthelmess , et al. January 15, 2 | 2008-01-15 |
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method App 20070215981 - Schulze; Hans-Joachim ;   et al. | 2007-09-20 |
Method for fabricating a semiconductor having a field zone Grant 7,268,079 - Falck , et al. September 11, 2 | 2007-09-11 |
Thyristor with recovery protection App 20070051972 - Schulze; Hans-Joachim ;   et al. | 2007-03-08 |
High speed diode App 20070029634 - Schulze; Hans-Joachim ;   et al. | 2007-02-08 |
Diode App 20070007587 - Barthelmess; Reiner ;   et al. | 2007-01-11 |
Semiconductor Component with a Channel Stop Zone App 20070007592 - Barthelmess; Reiner ;   et al. | 2007-01-11 |
Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone App 20060286753 - Barthelmess; Reiner ;   et al. | 2006-12-21 |
Semiconductor component and method for producing the same App 20060086991 - Barthelmess; Reiner ;   et al. | 2006-04-27 |
Method for fabricating field rings App 20060051923 - Falck; Elmar ;   et al. | 2006-03-09 |
Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone App 20050280076 - Barthelmess, Reiner ;   et al. | 2005-12-22 |
Thyristor component with improved blocking capabilities in the reverse direction App 20050258448 - Barthelmess, Reiner ;   et al. | 2005-11-24 |
High-voltage diode Grant 6,770,917 - Barthelmess , et al. August 3, 2 | 2004-08-03 |
Power semiconductor component having a mesa edge termination Grant 6,696,705 - Barthelmess , et al. February 24, 2 | 2004-02-24 |
Method for producing a power semiconductor device with a stop zone Grant 6,660,569 - Barthelmess , et al. December 9, 2 | 2003-12-09 |
High-voltage diode and method for fabricating the high-voltage diode App 20030183900 - Barthelmess, Reiner ;   et al. | 2003-10-02 |
Power semiconductor component for high reverse voltages App 20010005036 - Porst, Alfred ;   et al. | 2001-06-28 |