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Patent applications and USPTO patent grants for Barsky; Michael Edward.The latest application filed is for "leakage barrier for gan based hemt active device".
Patent | Date |
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Leakage barrier for GaN based HEMT active device Grant 8,809,907 - Sandhu , et al. August 19, 2 | 2014-08-19 |
Leakage barrier for GaN based HEMT active device Grant 8,809,137 - Sandhu , et al. August 19, 2 | 2014-08-19 |
LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE App 20120032185 - Sandhu; Rajinder Randy ;   et al. | 2012-02-09 |
Leakage barrier for GaN based HEMT active device Grant 8,026,132 - Sandhu , et al. September 27, 2 | 2011-09-27 |
LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE App 20080153215 - Sandhu; Rajinder Randy ;   et al. | 2008-06-26 |
Leakage barrier for GaN based HEMT active device App 20070218611 - Sandhu; Rajinder Randy ;   et al. | 2007-09-20 |
Hard substrate wafer sawing process Grant 7,041,579 - Barsky , et al. May 9, 2 | 2006-05-09 |
Hard substrate wafer sawing process App 20050090076 - Barsky, Michael Edward ;   et al. | 2005-04-28 |
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