loadpatents
name:-0.0057539939880371
name:-0.0062141418457031
name:-0.0005500316619873
Barile; Conrad A. Patent Filings

Barile; Conrad A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Barile; Conrad A..The latest application filed is for "method for prediction of premature dielectric breakdown in a semiconductor".

Company Profile
0.6.4
  • Barile; Conrad A. - Wappingers Falls NY
  • Barile; Conrad A - Wappingers Falls NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method for prediction of premature dielectric breakdown in a semiconductor
Grant 8,053,257 - Chanda , et al. November 8, 2
2011-11-08
Method For Prediction Of Premature Dielectric Breakdown In A Semiconductor
App 20080174334 - Chanda; Kaushik ;   et al.
2008-07-24
Method For Prediction Of Premature Dielectric Breakdown In A Semiconductor
App 20060281338 - Chanda; Kaushik ;   et al.
2006-12-14
Via barrier layers continuous with metal line barrier layers at notched or dielectric mesa portions in metal lines
Grant 7,138,714 - Nguyen , et al. November 21, 2
2006-11-21
Stacked via-stud with improved reliability in copper metallurgy
App 20060014376 - Agarwala; Birendra N. ;   et al.
2006-01-19
Stacked via-stud with improved reliability in copper metallurgy
Grant 6,972,209 - Agarwala , et al. December 6, 2
2005-12-06
Stacked via-stud with improved reliability in copper metallurgy
App 20040101663 - Agarwala, Birendra N. ;   et al.
2004-05-27
Bipolar transistor fabrication process with an ion implanted emitter
Grant 4,243,435 - Barile , et al. January 6, 1
1981-01-06
Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps
Grant 4,060,427 - Barile , et al. November 29, 1
1977-11-29
Electrically Erasable Floating Gate Fet Memory Cell
Grant 3,836,992 - Abbas , et al. September 17, 1
1974-09-17

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