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name:-0.0042331218719482
name:-0.013897180557251
name:-0.00068902969360352
Banerjee; Sanjay K. Patent Filings

Banerjee; Sanjay K.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Banerjee; Sanjay K..The latest application filed is for "transistor that employs collective magnetic effects thereby providing improved energy efficiency".

Company Profile
0.13.4
  • Banerjee; Sanjay K. - Austin TX
  • Banerjee; Sanjay K. - Richardson TX
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Transistor that employs collective magnetic effects thereby providing improved energy efficiency
Grant 9,825,218 - MacDonald , et al. November 21, 2
2017-11-21
Transistor That Employs Collective Magnetic Effects Thereby Providing Improved Energy Efficiency
App 20170104151 - Banerjee; Sanjay K. ;   et al.
2017-04-13
Topological insulator-based field-effect transistor
Grant 8,629,427 - Banerjee , et al. January 14, 2
2014-01-14
Topological Insulator-Based Field-Effect Transistor
App 20120273763 - Banerjee; Sanjay K. ;   et al.
2012-11-01
Bi-layer pseudo-spin field-effect transistor
Grant 8,263,967 - Banerjee , et al. September 11, 2
2012-09-11
Bi-layer Pseudo-spin Field-effect Transistor
App 20120212257 - Banerjee; Sanjay K. ;   et al.
2012-08-23
Bi-layer pseudo-spin field-effect transistor
Grant 8,188,460 - Banerjee , et al. May 29, 2
2012-05-29
Bi-layer Pseudo-spin Field-effect Transistor
App 20100127243 - Banerjee; Sanjay K. ;   et al.
2010-05-27
Vertical channel floating gate transistor having silicon germanium channel layer
Grant 6,313,487 - Kencke , et al. November 6, 2
2001-11-06
Floating gate transistor having buried strained silicon germanium channel layer
Grant 6,313,486 - Kencke , et al. November 6, 2
2001-11-06
Non-volatile memory array with over-erase correction
Grant 5,546,340 - Hu , et al. August 13, 1
1996-08-13
Modulation doped field effect transistor having built-in drift field
Grant 5,436,474 - Banerjee , et al. July 25, 1
1995-07-25
P-I-N MOSFET for ULSI applications
Grant 5,432,366 - Banerjee , et al. July 11, 1
1995-07-11
Trench DRAM cell with dynamic gain
Grant 4,999,811 - Banerjee * March 12, 1
1991-03-12
Two-transistor dram cell with high alpha particle immunity
Grant 4,864,374 - Banerjee September 5, 1
1989-09-05
dRAM cell and method
Grant 4,713,678 - Womack , et al. December 15, 1
1987-12-15

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