Patent | Date |
---|
Nitrogen-doped silicon substantially free of oxidation induced stacking faults Grant 7,404,856 - Haga , et al. July 29, 2 | 2008-07-29 |
Nitrogen-doped Silicon Substantially Free Of Oxidation Induced Stacking Faults App 20070169683 - Haga; Hiroyo ;   et al. | 2007-07-26 |
Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults Grant 7,217,320 - Kim , et al. May 15, 2 | 2007-05-15 |
Process for making silicon wafers with stabilized oxygen precipitate nucleation centers Grant 7,201,800 - Mule'Stagno , et al. April 10, 2 | 2007-04-10 |
Apparatus for preparation of silicon crystals with reduced metal content App 20070074653 - Sreedharamurthy; Hariprasad ;   et al. | 2007-04-05 |
Nitrogen-doped silicon substantially free of oxidation induced stacking faults Grant 7,182,809 - Haga , et al. February 27, 2 | 2007-02-27 |
Single crystal silicon ingot having a high arsenic concentration Grant 7,132,091 - Kulkarni , et al. November 7, 2 | 2006-11-07 |
Method for the production of low defect density silicon Grant 7,105,050 - Voronkov , et al. September 12, 2 | 2006-09-12 |
Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults App 20050150445 - Kim, Chang Bum ;   et al. | 2005-07-14 |
Method for the production of low defect density silicon App 20050132948 - Vornokov, Vladimir V. ;   et al. | 2005-06-23 |
Seed crystals for pulling single crystal silicon Grant 6,866,713 - Sreedharamurthy , et al. March 15, 2 | 2005-03-15 |
Process for making silicon wafers with stabilized oxygen precipitate nucleation centers App 20050048247 - Mule'Stagno, Luciano ;   et al. | 2005-03-03 |
Method for the production of low defect density silicon Grant 6,858,307 - Vornokov , et al. February 22, 2 | 2005-02-22 |
Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults Grant 6,846,539 - Kim , et al. January 25, 2 | 2005-01-25 |
Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same Grant 6,808,781 - Mule'Stagno , et al. October 26, 2 | 2004-10-26 |
Nitrogen-doped silicon substantially free of oxidation induced stacking faults App 20040009111 - Haga, Hiroyo ;   et al. | 2004-01-15 |
Crystal puller and method for growing monocrystalline silicon ingots Grant 6,663,709 - Lu , et al. December 16, 2 | 2003-12-16 |
Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation App 20030196587 - McCallum, Kirk D. ;   et al. | 2003-10-23 |
Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same App 20030136961 - Mule'Stagno, Luciano ;   et al. | 2003-07-24 |
Seed crystals for pulling single crystal silicon App 20030079673 - Sreedharamurthy, Hariprasad ;   et al. | 2003-05-01 |
Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder App 20030061985 - Kulkarni, Milind ;   et al. | 2003-04-03 |
Crystal puller for growing monocrystalline silicon ingots App 20030024473 - Lu, Zheng ;   et al. | 2003-02-06 |
Crystal puller and method for growing monocrystalline silicon ingots App 20020195045 - Lu, Zheng ;   et al. | 2002-12-26 |
Apparatus and process for the preparation of low-iron single crystal silicon substantially free of agglomerated intrinsic point defects App 20020144642 - Sreedharamurthy, Hariprasad ;   et al. | 2002-10-10 |
Heat shield assembly for crystal puller App 20020134302 - Ferry, Lee W. ;   et al. | 2002-09-26 |
Crystal puller and method for growing single crystal semiconductor material App 20020124792 - Sreedharamurthy, Hariprasad ;   et al. | 2002-09-12 |
Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults App 20020100410 - Kim, Chang Bum ;   et al. | 2002-08-01 |
Silicon wafers substantially free of oxidation induced stacking faults App 20020084451 - Mohr, Thomas C. ;   et al. | 2002-07-04 |
Method for the production of low defect density silicon App 20020056410 - Voronkov, Vladimir V. ;   et al. | 2002-05-16 |
Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method Grant 6,312,517 - Banan , et al. November 6, 2 | 2001-11-06 |
Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma Grant 5,753,567 - Banan , et al. May 19, 1 | 1998-05-19 |
Rapid cooling of CZ silicon crystal growth system Grant 5,676,751 - Banan , et al. October 14, 1 | 1997-10-14 |