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Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer Grant 6,940,100 - Tsujimura , et al. September 6, 2 | 2005-09-06 |
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GaN-based compound semiconductor EPI-wafer and semiconductor element using the same Grant 6,734,530 - Ban May 11, 2 | 2004-05-11 |
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Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device App 20030203629 - Ishibashi, Akihiko ;   et al. | 2003-10-30 |
Semiconductor light-emitting device, method for fabricating the same and optical disk apparatus App 20030168653 - Tsujimura, Ayumu ;   et al. | 2003-09-11 |
Semiconductor light-emitting device with quantum well Grant 6,614,059 - Tsujimura , et al. September 2, 2 | 2003-09-02 |
Method for producing semiconductor and semiconductor laser device Grant 6,611,005 - Tsujimura , et al. August 26, 2 | 2003-08-26 |
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Formation method for semiconductor layer Grant 6,562,129 - Hasegawa , et al. May 13, 2 | 2003-05-13 |
GaN-based compound semiconductor EPI-wafer and semiconductor element using the same App 20030001238 - Ban, Yuzaburo | 2003-01-02 |
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Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device App 20020081763 - Ishibashi, Akihiko ;   et al. | 2002-06-27 |
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Optical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operations Grant 6,072,762 - Kume , et al. June 6, 2 | 2000-06-06 |
Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate Grant 6,030,849 - Hasegawa , et al. February 29, 2 | 2000-02-29 |
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Semiconductor light-emitting device and production method thereof Grant 5,895,225 - Kidoguchi , et al. April 20, 1 | 1999-04-20 |
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