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Patent applications and USPTO patent grants for Balzan; Matthew L..The latest application filed is for "self-aligned gate realignment employing planarizing overetch".
Patent | Date |
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Self-aligned gate realignment employing planarizing overetch Grant 4,965,218 - Geissberger , et al. October 23, 1 | 1990-10-23 |
GaAs FET manufacturing process employing channel confining layers Grant 4,962,050 - Geissberger , et al. October 9, 1 | 1990-10-09 |
Self-aligned refractory gate process with self-limiting undercut of an implant mask Grant 4,849,376 - Balzan , et al. July 18, 1 | 1989-07-18 |
Method of making self-aligned GaAs devices having TiWN.sub.x gate/interconnect Grant 4,782,032 - Geissberger , et al. November 1, 1 | 1988-11-01 |
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