| Patent | Date |
|---|
Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
Grant 5,637,898 - Baliga June 10, 1 | 1997-06-10 |
Schottky barrier rectifiers and methods of forming same
Grant 5,612,567 - Baliga March 18, 1 | 1997-03-18 |
Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
Grant 5,543,637 - Baliga August 6, 1 | 1996-08-06 |
Bidirectional AC switching device with MOS-gated turn-on and turn-off control
Grant 5,493,134 - Mehrotra , et al. February 20, 1 | 1996-02-20 |
Method of fabricating high voltage silicon carbide MESFETs
Grant 5,459,089 - Baliga October 17, 1 | 1995-10-17 |
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
Grant 5,449,925 - Baliga , et al. * September 12, 1 | 1995-09-12 |
Method of forming trenches in monocrystalline silicon carbide
Grant 5,436,174 - Baliga , et al. July 25, 1 | 1995-07-25 |
Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same
Grant 5,412,228 - Baliga May 2, 1 | 1995-05-02 |
High voltage silicon carbide MESFETs and methods of fabricating same
Grant 5,399,883 - Baliga March 21, 1 | 1995-03-21 |
Silicon carbide switching device with rectifying-gate
Grant 5,396,085 - Baliga March 7, 1 | 1995-03-07 |
Schottky barrier rectifier with MOS trench
Grant 5,365,102 - Mehrotra , et al. November 15, 1 | 1994-11-15 |
Silicon carbide field effect transistor
Grant 5,338,945 - Baliga , et al. August 16, 1 | 1994-08-16 |
Method of fabricating silicon carbide field effect transistor
Grant 5,322,802 - Baliga , et al. June 21, 1 | 1994-06-21 |
Silicon carbide field effect device
Grant 5,323,040 - Baliga June 21, 1 | 1994-06-21 |
MOS gated thyristor having on-state current saturation capability
Grant 5,319,222 - Shekar , et al. * June 7, 1 | 1994-06-07 |
Method for forming a p-n junction in silicon carbide
Grant 5,318,915 - Baliga , et al. June 7, 1 | 1994-06-07 |
MOS gated thyristor with remote turn-off electrode
Grant 5,317,171 - Shekar , et al. May 31, 1 | 1994-05-31 |
Emitter switched thyristor with buried dielectric layer
Grant 5,306,930 - Baliga April 26, 1 | 1994-04-26 |
Integrated multicelled semiconductor switching device for high current applications
Grant 5,296,725 - Nandakumar , et al. March 22, 1 | 1994-03-22 |
Emitter switched thyristor without parasitic thyristor latch-up susceptibility
Grant 5,293,054 - Shekar , et al. March 8, 1 | 1994-03-08 |
Method for forming an oxide-filled trench in silicon carbide
Grant 5,270,244 - Baliga December 14, 1 | 1993-12-14 |
Schottky barrier rectifier including schottky barrier regions of differing barrier heights
Grant 5,262,668 - Tu , et al. November 16, 1 | 1993-11-16 |
Merged P-I-N/Schottky power rectifier having extended P-I-N junction
Grant 5,241,195 - Tu , et al. August 31, 1 | 1993-08-31 |
Silicon carbide power MOSFET with floating field ring and floating field plate
Grant 5,233,215 - Baliga August 3, 1 | 1993-08-03 |
Base resistance controlled thyristor with single-polarity turn-on and turn-off control
Grant 5,198,687 - Baliga March 30, 1 | 1993-03-30 |
Multicellular FET having a Schottky diode merged therewith
Grant 5,111,253 - Korman , et al. May 5, 1 | 1992-05-05 |
Power field effect devices having small cell size and low contact resistance
Grant 4,998,151 - Korman , et al. March 5, 1 | 1991-03-05 |
Insulated gate bipolar transistor with improved latch-up current level and safe operating area
Grant 4,994,871 - Chang , et al. February 19, 1 | 1991-02-19 |
Field controlled diode (FCD) having MOS trench gates
Grant 4,994,883 - Chang , et al. February 19, 1 | 1991-02-19 |
Power field effect devices having low gate sheet resistance and low ohmic contact resistance
Grant 4,985,740 - Shenai , et al. January 15, 1 | 1991-01-15 |
Metal oxide semiconductor gated turn-off thyristor including a low lifetime region
Grant 4,982,258 - Baliga January 1, 1 | 1991-01-01 |
Power rectifier with trenches
Grant 4,982,260 - Chang , et al. January 1, 1 | 1991-01-01 |
Power bipolar transistor device with integral antisaturation diode
Grant 4,969,027 - Baliga , et al. November 6, 1 | 1990-11-06 |
Gate enhanced rectifier
Grant 4,969,028 - Baliga November 6, 1 | 1990-11-06 |
Power transistor structure with high speed integral antiparallel Schottky diode
Grant 4,967,243 - Baliga , et al. October 30, 1 | 1990-10-30 |
Metal oxide semiconductor gated turn-off thyristor having an interleaved structure
Grant 4,963,950 - Chang , et al. October 16, 1 | 1990-10-16 |
Bidirectional field effect semiconductor device and circuit
Grant 4,961,100 - Baliga , et al. October 2, 1 | 1990-10-02 |
Lateral depletion mode tyristor
Grant 4,942,445 - Baliga , et al. July 17, 1 | 1990-07-17 |
High voltage semiconductor devices with reduced on-resistance
Grant 4,942,440 - Baliga , et al. July 17, 1 | 1990-07-17 |
Insulated gate transistor with vertical integral diode and method of fabrication
Grant 4,933,740 - Baliga , et al. June 12, 1 | 1990-06-12 |
Monolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabrication
Grant 4,912,541 - Baliga , et al. March 27, 1 | 1990-03-27 |
Low noise, high frequency synchronous rectifier
Grant 4,903,189 - Ngo , et al. February 20, 1 | 1990-02-20 |
Circuit including a combined insulated gate bipolar transistor/MOSFET
Grant 4,901,127 - Chow , et al. February 13, 1 | 1990-02-13 |
Protective clamp for MOS gated devices
Grant 4,890,143 - Baliga , et al. December 26, 1 | 1989-12-26 |
Method of fabricating self aligned semiconductor devices
Grant 4,883,767 - Gray , et al. November 28, 1 | 1989-11-28 |
Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication
Grant 4,857,983 - Baliga , et al. August 15, 1 | 1989-08-15 |
Monolithically integrated insulated gate semiconductor device
Grant 4,847,671 - Pattanayak , et al. July 11, 1 | 1989-07-11 |
Metal oxide semiconductor gated turn off thyristor including a schottky contact
Grant 4,827,321 - Baliga May 2, 1 | 1989-05-02 |
Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
Grant 4,823,176 - Baliga , et al. April 18, 1 | 1989-04-18 |
Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
Grant 4,801,986 - Chang , et al. January 31, 1 | 1989-01-31 |
Monolithically integrated semiconductor device and process for fabrication
Grant 4,801,985 - Baliga , et al. January 31, 1 | 1989-01-31 |
Metal oxide semiconductor gated turn off thyristor
Grant 4,799,095 - Baliga January 17, 1 | 1989-01-17 |
Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
Grant 4,782,379 - Baliga November 1, 1 | 1988-11-01 |
Insulated-gate semiconductor device with low on-resistance
Grant 4,743,952 - Baliga May 10, 1 | 1988-05-10 |
Minimal mask process for fabricating a lateral insulated gate semiconductor device
Grant 4,717,679 - Baliga , et al. January 5, 1 | 1988-01-05 |
Composite circuit for power semiconductor switching
Grant 4,663,547 - Baliga , et al. May 5, 1 | 1987-05-05 |
Normally-off semiconductor device with low on resistance and circuit analogue
Grant 4,645,957 - Baliga February 24, 1 | 1987-02-24 |
Pinch rectifier
Grant 4,641,174 - Baliga February 3, 1 | 1987-02-03 |
Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
Grant 4,620,211 - Baliga , et al. October 28, 1 | 1986-10-28 |
Integrated power switching semiconductor devices including IGT and MOSFET structures
Grant 4,618,872 - Baliga October 21, 1 | 1986-10-21 |
Method for making vertical channel field controlled device employing a recessed gate structure
Grant 4,587,712 - Baliga May 13, 1 | 1986-05-13 |
Method of making vertical channel field controlled device employing a recessed gate structure
Grant 4,571,815 - Baliga , et al. February 25, 1 | 1986-02-25 |
Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same
Grant 4,569,118 - Baliga , et al. February 11, 1 | 1986-02-11 |
Inversion-mode insulated-gate gallium arsenide field-effect transistors
Grant 4,568,958 - Baliga February 4, 1 | 1986-02-04 |
Method of fabricating semiconductor devices having a diffused region of reduced length
Grant 4,567,641 - Baliga , et al. February 4, 1 | 1986-02-04 |
Normally-off, gate-controlled electrical circuit with low on-resistance
Grant 4,523,111 - Baliga June 11, 1 | 1985-06-11 |
Normally-off semiconductor device with low on resistance and circuit analogue
Grant 4,506,282 - Baliga March 19, 1 | 1985-03-19 |
Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
Grant 4,466,173 - Baliga August 21, 1 | 1984-08-21 |
Method of fabricating a semiconductor device with a base region having a deep portion
Grant 4,443,931 - Baliga , et al. April 24, 1 | 1984-04-24 |
Vertical channel field effect transistor
Grant 4,343,015 - Baliga , et al. August 3, 1 | 1982-08-03 |
Vertical field effect transistor with improved gate and channel structure
Grant 4,262,296 - Shealy , et al. April 14, 1 | 1981-04-14 |
Planar epitaxial refill using liquid phase epitaxy
Grant 4,251,299 - Baliga , et al. February 17, 1 | 1981-02-17 |
Fabrication of grown-in p-n junctions using liquid phase epitaxial growth of silicon
Grant 4,236,947 - Baliga December 2, 1 | 1980-12-02 |
Liquid phase epitaxial method of making a high power, vertical channel field effect transistor
Grant 4,191,602 - Baliga March 4, 1 | 1980-03-04 |
Liquid phase epitaxial method of covering buried regions for devices
Grant 4,128,440 - Baliga December 5, 1 | 1978-12-05 |
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