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Memory Cells Comprising Ferroelectric Material And Including Current Leakage Paths Having Different Total Resistances App 20210104597 - Balakrishnan; Muralikrishnan ;   et al. | 2021-04-08 |
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Methods of forming a capacitor comprising ferroelectric material and including current leakage paths having different total resistances Grant 10,680,057 - Balakrishnan , et al. | 2020-06-09 |
Methods Of Forming A Capacitor Comprising Ferroelectric Material And Including Current Leakage Paths Having Different Total Resi App 20190355803 - Balakrishnan; Muralikrishnan ;   et al. | 2019-11-21 |
Memory cells comprising ferroelectric material and including current leakage paths having different total resistances Grant 10,396,145 - Balakrishnan , et al. A | 2019-08-27 |
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Method For Forming A Metal Cap In A Semiconductor Memory Device App 20170133585 - Balakrishnan; Muralikrishnan ;   et al. | 2017-05-11 |
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Optimized solid electrolyte for programmable metallization cell devices and structures Grant 7,385,219 - Kozicki , et al. June 10, 2 | 2008-06-10 |
Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same Grant 7,372,065 - Kozicki , et al. May 13, 2 | 2008-05-13 |
Programmable Metallization Cell Structures Including An Oxide Electrolyte, Devices Including The Structure And Method Of Forming Same App 20080006812 - Kozicki; Michael N. ;   et al. | 2008-01-10 |
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