BAKOWSKI; Mietek

Patent Applications and Registrations

Patent applications and USPTO patent grants for BAKOWSKI; Mietek.The latest application filed is for "semiconductor structure".

Company Profile

0.17.4

BAKOWSKI; Mietek - Kista SE
Bakowski; Mietek - Stillingson SE
Bakowski; Mietek - Sodertalje SE
Bakowski, Mietek - Skultuna SE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Structure App 20150287818 - YEN; Cheng-Tyng ; et al.	2015-10-08
Semiconductor device Grant 7,863,656 - Harris , et al. January 4, 2	2011-01-04
Semiconductor Device App 20090206347 - Harris; Christopher ; et al.	2009-08-20
Protective layer for a semiconductor device Grant 6,670,705 - Harris , et al. December 30, 2	2003-12-30
Semiconductor Device And A Method For Production Thereof App 20020094667 - Bakowski, Mietek ; et al.	2002-07-18
Junction termination for SiC schottky diode App 20020017647 - Bakowski, Mietek ; et al.	2002-02-14
Bipolar transistor having a low doped drift layer of crystalline SiC Grant 6,313,488 - Bakowski , et al. November 6, 2	2001-11-06
Transistor of SIC Grant 6,201,280 - Bakowski , et al. March 13, 2	2001-03-13
Semiconductor device having high channel mobility and a high breakdown voltage for high power applications Grant 6,150,671 - Harris , et al. November 21, 2	2000-11-21
Schottky diode of SiC and a method for production thereof Grant 6,104,043 - Hermansson , et al. August 15, 2	2000-08-15
Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage Grant 6,091,108 - Harris , et al. July 18, 2	2000-07-18
Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge Grant 6,040,237 - Bakowski , et al. March 21, 2	2000-03-21
SiC semiconductor device comprising a pn junction with a voltage absorbing edge Grant 6,002,159 - Bakowski , et al. December 14, 1	1999-12-14
SiC semiconductor device comprising a pn junction Grant 5,932,894 - Bakowski , et al. August 3, 1	1999-08-03
Field controlled semiconductor device of SiC and a method for production thereof Grant 5,923,051 - Harris , et al. July 13, 1	1999-07-13
Junction termination for SiC Schottky diode Grant 5,914,500 - Bakowski , et al. June 22, 1	1999-06-22
Bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC Grant 5,831,287 - Bakowski , et al. November 3, 1	1998-11-03
Depletion region stopper for PN junction in silicon carbide Grant 5,801,836 - Bakowski , et al. September 1, 1	1998-09-01
Method for producing a channel region layer in a voltage controlled semiconductor device Grant 5,786,251 - Harris , et al. July 28, 1	1998-07-28
Field of the invention Grant 5,773,849 - Harris , et al. June 30, 1	1998-06-30
Optically triggered semiconductor device Grant 5,663,580 - Harris , et al. September 2, 1	1997-09-02

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