Bajaj; Mohit

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bajaj; Mohit.The latest application filed is for "transistor with phase transition material region between channel region and each source/drain region".

Company Profile

6.31.30

Bajaj; Mohit - Bangalore IN
Bajaj; Mohit - Karnatake IN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Transistor with phase transition material region between channel region and each source/drain region Grant 11,387,364 - Lahgere , et al. July 12, 2	2022-07-12
Transistor With Phase Transition Material Region Between Channel Region And Each Source/drain Region App 20220140131 - Lahgere; Avinash ; et al.	2022-05-05
Logic layout with reduced area and method of making the same Grant 10,373,942 - Asra , et al.	2019-08-06
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer Grant 10,366,897 - Ando , et al. July 30, 2	2019-07-30
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer Grant 10,347,494 - Ando , et al. July 9, 2	2019-07-09
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer Grant 10,319,596 - Ando , et al.	2019-06-11
Logic Layout With Reduced Area And Method Of Making The Same App 20190172822 - ASRA; Ram ; et al.	2019-06-06
Stable work function for narrow-pitch devices Grant 10,170,576 - Ando , et al. J	2019-01-01
Symmetric tunnel field effect transistor Grant 10,163,716 - Bajaj , et al. Dec	2018-12-25
Symmetric tunnel field effect transistor Grant 10,164,027 - Bajaj , et al. Dec	2018-12-25
Devices With Multiple Threshold Voltages Formed On A Single Wafer Using Strain In The High-k Layer App 20180226257 - Ando; Takashi ; et al.	2018-08-09
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer Grant 9,984,883 - Ando , et al. May 29, 2	2018-05-29
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer Grant 9,972,497 - Ando , et al. May 15, 2	2018-05-15
Symmetric Tunnel Field Effect Transistor App 20180130655 - BAJAJ; Mohit ; et al.	2018-05-10
Devices With Multiple Threshold Voltages Formed On A Single Wafer Using Strain In The High-k Layer App 20180096851 - Ando; Takashi ; et al.	2018-04-05
Stable Work Function For Narrow-pitch Devices App 20180083116 - Ando; Takashi ; et al.	2018-03-22
Symmetric tunnel field effect transistor Grant 9,911,598 - Bajaj , et al. March 6, 2	2018-03-06
Symmetric Tunnel Field Effect Transistor App 20180053828 - BAJAJ; Mohit ; et al.	2018-02-22
Symmetric tunnel field effect transistor Grant 9,876,084 - Bajaj , et al. January 23, 2	2018-01-23
Devices With Multiple Threshold Voltages Formed On A Single Wafer Using Strain In The High-k Layer App 20170278713 - Ando; Takashi ; et al.	2017-09-28
Stable work function for narrow-pitch devices Grant 9,735,250 - Ando , et al. August 15, 2	2017-08-15
Tunable voltage margin access diodes Grant 9,705,079 - Bajaj , et al. July 11, 2	2017-07-11
Symmetric Tunnel Field Effect Transistor App 20170194467 - BAJAJ; Mohit ; et al.	2017-07-06
Tunable voltage margin access diodes Grant 9,680,096 - Bajaj , et al. June 13, 2	2017-06-13
Stable Work Function For Narrow-pitch Devices App 20170148892 - Ando; Takashi ; et al.	2017-05-25
Stable Work Function For Narrow-pitch Devices App 20170148890 - Ando; Takashi ; et al.	2017-05-25
Tunable voltage margin access diodes Grant 9,647,210 - Bajaj , et al. May 9, 2	2017-05-09
Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer Grant 9,627,484 - Ando , et al. April 18, 2	2017-04-18
Devices With Multiple Threshold Voltages Formed On A Single Wafer Using Strain In The High-k Layer App 20170103897 - Ando; Takashi ; et al.	2017-04-13
Devices With Multiple Threshold Voltages Formed On A Single Wafer Using Strain In The High-k Layer App 20170104066 - Ando; Takashi ; et al.	2017-04-13
Devices With Multiple Threshold Voltages Formed On A Single Wafer Using Strain In The High-k Layer App 20170103982 - Ando; Takashi ; et al.	2017-04-13
Symmetric tunnel field effect transistor Grant 9,613,867 - Bajaj , et al. April 4, 2	2017-04-04
Symmetric Tunnel Field Effect Transistor App 20170062594 - BAJAJ; Mohit ; et al.	2017-03-02
Symmetric Tunnel Field Effect Transistor App 20170062234 - BAJAJ; Mohit ; et al.	2017-03-02
Stable work function for narrow-pitch devices Grant 9,583,486 - Ando , et al. February 28, 2	2017-02-28
Tunable Voltage Margin Access Diodes App 20170047515 - Bajaj; Mohit ; et al.	2017-02-16
Tunable voltage margin access diodes Grant 9,508,930 - Bajaj , et al. November 29, 2	2016-11-29
Tunable Voltage Margin Access Diodes App 20160315254 - Bajaj; Mohit ; et al.	2016-10-27
Tunable Voltage Margin Access Diodes App 20160284995 - Bajaj; Mohit ; et al.	2016-09-29
Tunable Voltage Margin Access Diodes App 20160284870 - Bajaj; Mohit ; et al.	2016-09-29
Junctionless tunnel fet with metal-insulator transition material Grant 9,419,115 - Bajaj , et al. August 16, 2	2016-08-16
Junctionless tunnel FET with metal-insulator transition material Grant 9,419,016 - Bajaj , et al. August 16, 2	2016-08-16
Symmetric tunnel field effect transistor Grant 9,379,253 - Bajaj , et al. June 28, 2	2016-06-28
Semiconductor Device With A Stoichiometric Gradient App 20160172420 - Bajaj; Mohit ; et al.	2016-06-16
Junctionless Tunnel Fet With Metal-insulator Transition Material App 20160133648 - Bajaj; Mohit ; et al.	2016-05-12
Junctionless Tunnel Fet With Metal-insulator Transition Material App 20160133730 - Bajaj; Mohit ; et al.	2016-05-12
Gate strain induced work function engineering Grant 9,105,498 - Bajaj , et al. August 11, 2	2015-08-11
Method Of Modeling Concentration Of Reducible Mobile Ionic Dopant In Semiconductor Device Simulator App 20150192533 - Bajaj; Mohit ; et al.	2015-07-09
Gate strain induced work function engineering Grant 9,070,579 - Bajaj , et al. June 30, 2	2015-06-30
Modeling charge distribution on FinFET sidewalls Grant 9,064,976 - Agarwal , et al. June 23, 2	2015-06-23
Gate Strain Induced Work Function Engineering App 20150035075 - Bajaj; Mohit ; et al.	2015-02-05
Silicon controlled rectifier (SCR) clamp including metal insulator transition (MIT) resistor Grant 8,929,039 - Bajaj , et al. January 6, 2	2015-01-06
Silicon Controlled Rectifier (scr) Clamp Including Metal Insulator Transition (mit) Resistor App 20130314825 - Bajaj; Mohit ; et al.	2013-11-28
Gate Strain Induced Work Function Engineering App 20130228872 - Bajaj; Mohit ; et al.	2013-09-05
Structure and fabrication method of tunnel field effect transistor with increased drive current and reduced gate induced drain leakage (GIDL) Grant 8,450,792 - Bajaj , et al. May 28, 2	2013-05-28
Structure And Fabrication Method Of Tunnel Field Effect Transistor With Increased Drive Current And Reduced Gate Induced Drain Leakage (gidl) App 20120256248 - Bajaj; Mohit ; et al.	2012-10-11

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