Bai; Shengqiang
Patent Applications and Registrations
Patent applications and USPTO patent grants for Bai; Shengqiang.The latest application filed is for "clathrate compounds".
- Bai; Shengqiang - Shanghai CN
| Patent | Date |
|---|---|
| Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure Grant 8,097,802 - Yang , et al. January 17, 2 | 2012-01-17 |
| Clathrate Compounds App 20110218109 - Bai; Shengqiang ; et al. | 2011-09-08 |
| Thermoelectric Material Including A Multiple Transition Metal-doped Type I Clathrate Crystal Structure App 20100275963 - Yang; Jihui ; et al. | 2010-11-04 |
| Thermoelectric Material Including A Filled Skutterudite Crystal Structure App 20100071741 - Yang; Jihui ; et al. | 2010-03-25 |
| High Efficiency Skutterudite Type Thermoelectric Materials And Devices App 20090293930 - Yang; Jihui ; et al. | 2009-12-03 |
| CoSb.sub.3-based thermoelectric device fabrication method Grant 7,321,157 - Chen , et al. January 22, 2 | 2008-01-22 |
| CoSb3-based thermoelectric device fabrication method App 20060017170 - Chen; Lidong ; et al. | 2006-01-26 |
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