Bahl; Sandeep R.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bahl; Sandeep R..The latest application filed is for "method and circuitry for controlling a depletion-mode transistor".

Company Profile

4.35.36

Bahl; Sandeep R. - Palo Alto CA
Bahl; Sandeep R. - Loveland CO

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method and circuitry for controlling a depletion-mode transistor Grant 11,356,087 - Seeman , et al. June 7, 2	2022-06-07
Overvoltage protection and short-circuit withstanding for gallium nitride devices Grant 11,088,534 - Bahl August 10, 2	2021-08-10
Method And Circuitry For Controlling A Depletion-mode Transistor App 20210167767 - Seeman; Michael Douglas ; et al.	2021-06-03
High voltage device with multi-electrode control Grant 10,340,252 - Bahl , et al.	2019-07-02
Overvoltage Protection And Short-circuit Withstanding For Gallium Nitride Devices App 20190199084 - Bahl; Sandeep R.	2019-06-27
Overvoltage protection and short-circuit withstanding for gallium nitride devices Grant 10,270,239 - Bahl	2019-04-23
High-resolution Power Electronics Measurements App 20190094276 - Bahl; Sandeep R. ; et al.	2019-03-28
High-resolution power electronics measurements Grant 10,094,863 - Bahl , et al. October 9, 2	2018-10-09
High Voltage Device With Multi-electrode Control App 20180233481 - Bahl; Sandeep R. ; et al.	2018-08-16
High voltage device with multi-electrode control Grant 9,991,225 - Bahl , et al. June 5, 2	2018-06-05
Method And Circuitry For Controlling A Depletion-mode Transistor App 20180006640 - Seeman; Michael Douglas ; et al.	2018-01-04
Overvoltage Protection And Short-circuit Withstanding For Gallium Nitride Devices App 20170365995 - Bahl; Sandeep R.	2017-12-21
Method and circuitry for controlling a depletion-mode transistor Grant 9,762,230 - Seeman , et al. September 12, 2	2017-09-12
High-resolution Power Electronics Measurements App 20170254842 - Bahl; Sandeep R. ; et al.	2017-09-07
High Voltage Device With Multi-electrode Control App 20160380089 - Bahl; Sandeep R. ; et al.	2016-12-29
Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates Grant 9,082,817 - Bahl , et al. July 14, 2	2015-07-14
Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates Grant 9,064,928 - Bahl , et al. June 23, 2	2015-06-23
Method And Circuitry For Controlling A Depletion-mode Transistor App 20150137619 - Seeman; Michael Douglas ; et al.	2015-05-21
Ohmic contact schemes for group III-V devices having a two-dimensional electron gas layer Grant 8,946,780 - Bahl , et al. February 3, 2	2015-02-03
Bi-directional Gallium Nitride Switch With Self-managed Substrate Bias App 20140374766 - BAHL; Sandeep R. ; et al.	2014-12-25
Growth Of Multi-layer Group Iii-nitride Buffers On Large-area Silicon Substrates And Other Substrates App 20140051226 - BAHL; Sandeep R. ; et al.	2014-02-20
Growth Of Multi-layer Group Iii-nitride Buffers On Large-area Silicon Substrates And Other Substrates App 20140042458 - BAHL; Sandeep R. ; et al.	2014-02-13
Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions Grant 8,629,027 - Bulucea , et al. January 14, 2	2014-01-14
Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates Grant 8,592,292 - Bahl , et al. November 26, 2	2013-11-26
Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone Grant 8,415,752 - Yang , et al. April 9, 2	2013-04-09
Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket Grant 8,410,549 - Bulucea , et al. April 2, 2	2013-04-02
Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses Grant 8,377,768 - Bulucea , et al. February 19, 2	2013-02-19
Configuration and Fabrication of Semiconductor Structure Having Asymmetric Field-effect Transistor with Tailored Pocket Portion Along Source/Drain Zone App 20130015535 - Yang; Jeng-Jiun ; et al.	2013-01-17
Growth of group III nitride-based structures and integration with conventional CMOS processing tools Grant 8,318,563 - Bahl , et al. November 27, 2	2012-11-27
Gallium Nitride Or Other Group Iii/v-based Schottky Diodes With Improved Operating Characteristics App 20120280281 - Bahl; Sandeep R.	2012-11-08
Configuration and fabrication of semiconductor structure using empty and filled wells Grant 8,304,835 - Bulucea , et al. November 6, 2	2012-11-06
Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants Grant 8,304,320 - Bahl , et al. November 6, 2	2012-11-06
Structure and Fabrication of Like-polarity Field-effect Transistors Having Different Configurations of Source/Drain Extensions, Halo Pockets, and Gate Dielectric Thicknesses App 20120264263 - Bulucea; Constantin ; et al.	2012-10-18
Ohmic Contact Schemes For Group Iii-v Devices Having A Two-dimensional Electron Gas Layer App 20120223317 - Bahl; Sandeep R. ; et al.	2012-09-06
Configuration and Fabrication of Semiconductor Structure in Which Source and Drain Extensions of Field-effect Transistor Are Defined with Different Dopants App 20120184077 - Bahl; Sandeep R. ; et al.	2012-07-19
Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone Grant 8,163,619 - Yang , et al. April 24, 2	2012-04-24
Growth of multi-layer group III-nitride buffers on large-area silicon Substrates and other substrates App 20120056244 - Bahl; Sandeep R. ; et al.	2012-03-08
Fabrication of asymmetric field-effect transistors using L-shaped spacers Grant 8,101,479 - Parker , et al. January 24, 2	2012-01-24
Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses Grant 8,084,827 - Bulucea , et al. December 27, 2	2011-12-27
Growth of group III nitride- based structures and integration with conventional CMOS processing tools App 20110284859 - Bahl; Sandeep R. ; et al.	2011-11-24
Semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants Grant 7,973,372 - Bahl , et al. July 5, 2	2011-07-05
Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions Grant 7,968,921 - Bulucea , et al. June 28, 2	2011-06-28
Gated anti-fuse in CMOS process App 20110108926 - Bahl; Sandeep R.	2011-05-12
Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portions along source/drain zone App 20100244147 - Yang; Jeng-Jiun ; et al.	2010-09-30
Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants App 20100244150 - Bahl; Sandeep R. ; et al.	2010-09-30
Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions App 20100244131 - Bulucea; Constantin ; et al.	2010-09-30
Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses App 20100244149 - Bulucea; Constantin ; et al.	2010-09-30
Fabrication and structure of asymmetric field-effect transistors using L-shaped spacers App 20100244106 - Parker; D. Courtney ; et al.	2010-09-30
Configuration and fabrication of semiconductor structure having extended-drain field-effect transistor App 20100244152 - Bahl; Sandeep R. ; et al.	2010-09-30
Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket App 20100244130 - Bulucea; Constantin ; et al.	2010-09-30
Configuration and fabrication of semiconductor structure using empty and filled wells App 20100244128 - Bulucea; Constantin ; et al.	2010-09-30
Method and apparatus for integrating III-V semiconductor devices into silicon processes Grant 7,608,471 - Bahl October 27, 2	2009-10-27
Reduced crosstalk CMOS image sensors Grant 7,592,654 - Bahl , et al. September 22, 2	2009-09-22
Reduced Crosstalk Cmos Image Sensors App 20080079045 - Bahl; Sandeep R. ; et al.	2008-04-03
Reduced crosstalk CMOS image sensors Grant 7,307,327 - Bahl , et al. December 11, 2	2007-12-11
Light-emitting Group IV semiconductor devices Grant 7,294,848 - Bahl , et al. November 13, 2	2007-11-13
Carrier confinement in light-emitting group IV semiconductor devices Grant 7,247,885 - Rankin , et al. July 24, 2	2007-07-24
Integrated opto-electric SPR sensor App 20070052049 - Bahl; Sandeep R. ; et al.	2007-03-08
Method and apparatus for integrating III-V semiconductor devices into silicon processes App 20070037362 - Bahl; Sandeep R.	2007-02-15
Reduced crosstalk CMOS image sensors App 20070029589 - Bahl; Sandeep R. ; et al.	2007-02-08
Carrier confinement in light-emitting group IV semiconductor devices App 20060270086 - Rankin; Glenn H. ; et al.	2006-11-30
Light-emitting group IV semiconductor devices App 20060267151 - Bahl; Sandeep R. ; et al.	2006-11-30
Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure Grant 6,768,141 - Bahl , et al. July 27, 2	2004-07-27
Heterojunction bipolar transistor(HBT) having improved emitter-base grading structure App 20040036082 - Bahl, Sandeep R. ; et al.	2004-02-26

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