Bae; Jun-Soo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bae; Jun-Soo.The latest application filed is for "magnetic random access memory devices and methods of manufacturing the same".

Company Profile

0.38.44

Bae; Jun-Soo - Hwaseong-si KR
Bae; Jun-Soo - Gyeonggi-do KR
Bae; Jun-soo - Hawseong-si KR
Bae; Jun-Soo - Hwasung KR
Bae; Jun-Soo - Hwasoeng-si KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetic random access memory devices and methods of manufacturing the same Grant 10,164,173 - Hwang , et al. Dec	2018-12-25
Magnetic Random Access Memory Devices And Methods Of Manufacturing The Same App 20170324031 - HWANG; Kyu-Man ; et al.	2017-11-09
Magnetic random access memory devices and methods of manufacturing the same Grant 9,761,792 - Hwang , et al. September 12, 2	2017-09-12
Magnetic Random Access Memory Devices And Methods Of Manufacturing The Same App 20160155934 - HWANG; Kyu-Man ; et al.	2016-06-02
Phase change memory devices and methods of manufacturing the same Grant 8,772,121 - Hwang , et al. July 8, 2	2014-07-08
Methods of forming phase-changeable memory devices including an adiabatic layer Grant 8,513,051 - Ha , et al. August 20, 2	2013-08-20
Phase Change Memory Devices And Methods Of Manufacturing The Same App 20120273741 - HWANG; Kyu-Man ; et al.	2012-11-01
Multi-level phase change memory device, program method thereof, and method and system including the same Grant 8,238,147 - Bae , et al. August 7, 2	2012-08-07
Non-volatile memory device including phase-change material Grant 8,237,141 - Kang , et al. August 7, 2	2012-08-07
Method fabricating semiconductor device using multiple polishing processes Grant 8,168,535 - Bae , et al. May 1, 2	2012-05-01
Variable resistance memory device and system thereof Grant 8,143,653 - Cho , et al. March 27, 2	2012-03-27
Variable resistance memory device and system thereof Grant 8,139,432 - Choi , et al. March 20, 2	2012-03-20
Phase change memory devices and systems, and related programming methods Grant 8,134,866 - Bae , et al. March 13, 2	2012-03-13
Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device Grant 8,116,117 - Cho , et al. February 14, 2	2012-02-14
Method Fabricating Semiconductor Device Using Multiple Polishing Processes App 20110306173 - BAE; Jun-Soo ; et al.	2011-12-15
Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device Grant 8,050,084 - Bae , et al. November 1, 2	2011-11-01
Magnetic memory device Grant 8,035,145 - Bae , et al. October 11, 2	2011-10-11
Multi-layer phase-changeable memory devices Grant 7,943,918 - Park , et al. May 17, 2	2011-05-17
Nonvolatile Memory Device, Storage System Having The Same, And Method Of Driving The Nonvolatile Memory Device App 20110080775 - Bae; Jun-Soo ; et al.	2011-04-07
Non-volatile memory device including phase-change material App 20110049457 - Kang; Myung-jin ; et al.	2011-03-03
Variable Resistance Memory Device And System Thereof App 20110026303 - Choi; Byung-Gil ; et al.	2011-02-03
Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory Grant 7,800,095 - An , et al. September 21, 2	2010-09-21
Resistance variable memory device and operating method thereof Grant 7,787,278 - Bae , et al. August 31, 2	2010-08-31
Magnetic Memory Device App 20100213558 - Bae; Jun-Soo ; et al.	2010-08-26
Resistance variable memory device and programming method thereof Grant 7,778,066 - Horii , et al. August 17, 2	2010-08-17
Phase change memory device and method of fabricating the same Grant 7,767,568 - An , et al. August 3, 2	2010-08-03
Methods Of Forming Phase-changeable Memory Devices Including An Adiabatic Layer App 20100144087 - Ha; Yong-Ho ; et al.	2010-06-10
Magnetic memory device and method of fabricating the same Grant 7,732,222 - Bae , et al. June 8, 2	2010-06-08
Variable Resistance Memory Device And System Thereof App 20100118593 - Cho; Woo-Yeong ; et al.	2010-05-13
Phase Change Memory Devices And Systems, And Related Programming Methods App 20100103726 - BAE; Jun-Soo ; et al.	2010-04-29
Method Of Driving Multi-level Variable Resistive Memory Device And Multi-level Variable Resistive Memory Device App 20100085799 - CHO; Woo-Yeong ; et al.	2010-04-08
Phase-changeable memory devices including an adiabatic layer Grant 7,692,176 - Ha , et al. April 6, 2	2010-04-06
Multi-layer Phase-changeable Memory Devices App 20100019216 - Park; Jeong-Hee ; et al.	2010-01-28
Magnetic random access memory device and method of forming the same Grant 7,645,619 - Oh , et al. January 12, 2	2010-01-12
Phase change memory device and method of forming the same Grant 7,638,788 - Ahn , et al. December 29, 2	2009-12-29
Method Of Forming A Phase Changeable Structure App 20090283741 - Lim; Young-Soo ; et al.	2009-11-19
Phase change memory device App 20090278107 - Kim; Do-Hyung ; et al.	2009-11-12
Methods of fabricating multi-layer phase-changeable memory devices Grant 7,615,401 - Park , et al. November 10, 2	2009-11-10
Magnetic Memory Devices Including Conductive Capping Layers App 20090230445 - Bae; Jun-Soo ; et al.	2009-09-17
Method of forming a phase changeable structure Grant 7,582,568 - Lim , et al. September 1, 2	2009-09-01
Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof Grant 7,582,890 - Ha , et al. September 1, 2	2009-09-01
Phase changeable structure and method of forming the same Grant 7,569,430 - Bae , et al. August 4, 2	2009-08-04
Phase change memory devices including memory cells having different phase change materials and related methods and systems Grant 7,558,100 - Ahn , et al. July 7, 2	2009-07-07
Methods of forming magnetic memory devices including oxidizing and etching magnetic layers Grant 7,541,199 - Bae , et al. June 2, 2	2009-06-02
Multi-level phase change memory device, program method thereof, and method and system including the same App 20090073754 - Bae; Jun-Soo ; et al.	2009-03-19
Resistance variable memory device and operating method thereof App 20090052236 - Bae; Jun-Soo ; et al.	2009-02-26
Resistance variable memory device and programming method thereof App 20090052235 - Horii; Hideki ; et al.	2009-02-26
Methods Of Fabricating Multi-layer Phase-changeable Memory Devices App 20090004773 - Park; Jeong-Hee ; et al.	2009-01-01
Phase change memory device and method of fabricating the same App 20080237566 - AN; Hyeong-Geun ; et al.	2008-10-02
Multi-layer phase-changeable memory devices Grant 7,425,735 - Park , et al. September 16, 2	2008-09-16
Magnetic random access memory device and method of forming the same App 20080153179 - OH; Se-Chung ; et al.	2008-06-26
Phase-change Memory Device Having Phase Change Material Pattern Shared Between Adjacent Cells And Electronic Product Including The Phase-change Memory App 20080149910 - AN; Hyeong-geun ; et al.	2008-06-26
Magnetic tunnel junction and memory device including the same Grant 7,378,698 - Ha , et al. May 27, 2	2008-05-27
Magnetic random access memory device and method of forming the same Grant 7,372,090 - Oh , et al. May 13, 2	2008-05-13
Phase change memory device and method of forming the same App 20080093590 - Ahn; Dong-Ho ; et al.	2008-04-24
Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier Grant 7,352,021 - Bae , et al. April 1, 2	2008-04-01
Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier Grant 7,351,594 - Bae , et al. April 1, 2	2008-04-01
Phase change memory devices including memory cells having different phase change materials and related methods and systems App 20080068879 - Ahn; Dong-Ho ; et al.	2008-03-20
Methods of Forming Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates App 20070230242 - Lee; Jang Eun ; et al.	2007-10-04
Method Of Forming A Phase Changeable Structure App 20070224796 - LIM; Young-Soo ; et al.	2007-09-27
Multi-layer Phase-changeable Memory Devices And Methods Of Fabricating The Same App 20070215853 - Park; Jeong-Hee ; et al.	2007-09-20
Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates and Related Methods App 20070206411 - Lee; Jang Eun ; et al.	2007-09-06
Phase Changeable Structure And Method Of Forming The Same App 20070190683 - BAE; Jun-Soo ; et al.	2007-08-16
Method Of Forming A Phase-changeable Structure App 20070166870 - LIM; Young-Soo ; et al.	2007-07-19
Methods Of Forming Magnetic Random Access Memory Devices Having Titanium-rich Lower Electrodes With Oxide Layer And Oriented Tunneling Barrier App 20070148789 - Bae; Jun-Soo ; et al.	2007-06-28
Method of writing to MRAM devices Grant 7,218,556 - Kim , et al. May 15, 2	2007-05-15
Magnetic Tunnel Junction Structure Having An Oxidized Buffer Layer And Method Of Fabricating The Same App 20070041125 - HA; Young-Ki ; et al.	2007-02-22
Magnetic Memory Device And Method Of Fabricating The Same App 20070041243 - BAE; Jun-Soo ; et al.	2007-02-22
Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same Grant 7,141,438 - Ha , et al. November 28, 2	2006-11-28
Methods of forming magnetic memory devices and resulting magnetic memory devices App 20060246604 - Bae; Jun-Soo ; et al.	2006-11-02
Magnetic random access memory device and method of forming the same App 20060174473 - Oh; Se-Chung ; et al.	2006-08-10
Phase-changeable memory devices including an adiabatic layer and methods of forming the same App 20060039192 - Ha; Yong-Ho ; et al.	2006-02-23
Method of writing to MRAM devices App 20060039190 - Kim; Hyun-Jo ; et al.	2006-02-23
Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methods App 20060027846 - Lee; Jang-Eun ; et al.	2006-02-09
Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof App 20050230771 - Ha, Young-Ki ; et al.	2005-10-20
Magnetic tunnel junction and memory device including the same App 20050035383 - Ha, Young-Ki ; et al.	2005-02-17
Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same App 20050035386 - Ha, Young-Ki ; et al.	2005-02-17
Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier, and methods for forming the same App 20050006682 - Bae, Jun-Soo ; et al.	2005-01-13

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