Babcock; Jeff

Patent Applications and Registrations

Patent applications and USPTO patent grants for Babcock; Jeff.The latest application filed is for "ldmos transistor having gate shield and trench source capacitor".

Company Profile

0.6.4

Babcock; Jeff - Santa Clara CA
Babcock; Jeff - Sunnyvale CA
Babcock; Jeff - Ontario CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Laterally diffused MOS transistor having N+ source contact to N-doped substrate Grant RE42,403 - Babcock , et al. May 31, 2	2011-05-31
Non-volatile memory cell with fully isolated substrate as charge storage Grant 7,808,034 - Babcock , et al. October 5, 2	2010-10-05
Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storage Grant 7,663,173 - Desai , et al. February 16, 2	2010-02-16
LDMOS transistor with improved gate shield Grant 7,307,314 - Babcock , et al. December 11, 2	2007-12-11
Laterally diffused MOS transistor having N+ source contact to N-doped substrate Grant 7,061,057 - Babcock , et al. June 13, 2	2006-06-13
Laterally diffused MOS transistor having source capacitor and gate shield App 20050280087 - Babcock, Jeff ; et al.	2005-12-22
LDMOS transistor with improved gate shield App 20050280080 - Babcock, Jeff ; et al.	2005-12-22
Laterally diffused MOS transistor having N+ source contact to N-doped substrate App 20050280101 - Babcock, Jeff ; et al.	2005-12-22
LDMOS transistor having gate shield and trench source capacitor App 20050280085 - Babcock, Jeff ; et al.	2005-12-22
Kaolin additive in mineral insulated metal sheathed cables Grant 6,759,592 - Cai , et al. July 6, 2	2004-07-06

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